Double Gaussian barrier distribution of permalloy (Ni0. 8Fe0. 2) Schottky contacts to n-type GaN
The temperature-dependent current-voltage (IV) characteristics of permalloy (Ni 0.8 Fe 0.2)
Schottky contacts to n-type GaN have been investigated. Magnetization measurements …
Schottky contacts to n-type GaN have been investigated. Magnetization measurements …
Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters
L Efthymiou, G Longobardi, G Camuso… - 2015 International …, 2015 - ieeexplore.ieee.org
This paper describes a method to extract the ideality factor, barrier height and series
resistance of a lateral AlGaN/GaN heterostructure power Schottky diode using a simple IV …
resistance of a lateral AlGaN/GaN heterostructure power Schottky diode using a simple IV …