Engineering breakdown probability profile for PDP and DCR optimization in a SPAD fabricated in a standard 55 nm BCD process

F Gramuglia, P Keshavarzian, E Kizilkan… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
CMOS single-photon avalanche diodes (SPADs) have broken into the mainstream by
enabling the adoption of imaging, timing, and security technologies in a variety of …

Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology

MD Lakeh, JB Kammerer, JB Schell, D Issartel… - Sensors and Actuators A …, 2023 - Elsevier
This work presents several ultra-fast Active Quenching-Active Reset (AQAR) circuits with a
novel avalanche detection circuit, fabricated in a 28 nm Fully Depleted Silicon on Insulator …

CMOS-compatible Ising and Potts annealing using single-photon avalanche diodes

W Whitehead, Z Nelson, KY Camsari… - Nature Electronics, 2023 - nature.com
Massively parallel annealing processors are of potential use in a wide range of sampling
and optimization problems. A key component dictating the size of these processors is the …

Dark count rate modeling in single-photon avalanche diodes

A Panglosse, P Martin-Gonthier… - … on Circuits and …, 2020 - ieeexplore.ieee.org
In this paper, we present a model to simulate accurately the Dark Count Rate (DCR) for
Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor …

3D electro-optical simulations for improving the photon detection probability of SPAD implemented in FD-SOI CMOS technology

S Gao, D Issartel, R Orobtchouk… - … on Simulation of …, 2021 - ieeexplore.ieee.org
In this article, a 3D electro-optical simulation method is presented in order to estimate the
Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The …

Body-biasing considerations with SPAD FDSOI: advantages and drawbacks

TC De Albuquerque, D Issartel, R Clerc… - … 2019-49th European …, 2019 - ieeexplore.ieee.org
This article focusses on Single Photon Avalanche Diodes (SPAD) integrated in CMOS UTBB
FDSOI (Ultra-Thin Body and Box Fully Depleted Silicon-On-Insulator technology), as an …

[PDF][PDF] Correlations between DCR and PDP of SPAD integrated in a 28 nm FD-SOI CMOS Technology

S Gao, D Issartel, MD Lakeh, F Mandorlo… - Proceedings of the …, 2023 - imagesensors.org
This article presents an experimental study of the Dark Count Rate (DCR) and the Photon
Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD) implemented in …

Design and analysis of a microwave-optical dual modality biomolecular sensing platform

L Zhang, AM Niknejad - IEEE Journal of Solid-State Circuits, 2019 - ieeexplore.ieee.org
A combined microwave-optical biomolecular sensor with high sensitivity and selectivity is
presented. The microwave sensor characterizes the dielectric properties of a medium using …

An ultrafast active quenching circuit for SPAD in CMOS 28nm FDSOI technology

MD Lakeh, JB Kammerer, W Uhring… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
A very fast Active Quenching-Active Reset Circuit is proposed for the afterpulsing reduction
in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm …

[HTML][HTML] Indirect avalanche event detection of Single Photon Avalanche Diode implemented in CMOS FDSOI technology

TC de Albuquerque, D Issartel, R Clerc, P Pittet… - Solid-State …, 2020 - Elsevier
In this letter, a novel indirect avalanche event detection is proposed and demonstrated for
Single Photon Avalanche Diodes (SPADs) implemented in CMOS 28 nm Fully Depleted …