[HTML][HTML] The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges
KF Rahman, S Falina, MFP Mohamed… - Applied Physics …, 2024 - pubs.aip.org
It is only recently that the electric vehicle (EV) has evolved into a contemporary invention.
There has been a rapid acceleration in the development of EVs in a number of nations in …
There has been a rapid acceleration in the development of EVs in a number of nations in …
[HTML][HTML] A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron …
X Chen, N Li, Z Xing, J Zu, X Meng, Z Zhou, Q Li… - APL Materials, 2024 - pubs.aip.org
GaN, a third-generation semiconductor, has gained widespread attention owing to its high
temperature resistance, wide bandgap, and high critical breakdown electric fields …
temperature resistance, wide bandgap, and high critical breakdown electric fields …
Micro-Raman for Local Strain Evaluation of GaN LEDs and Si Chips Assembled on Cu Substrates
E Brugnolotto, C Mezzalira, F Conti, D Pedron… - Micromachines, 2023 - mdpi.com
Integrated circuits are created by interfacing different materials, semiconductors, and metals,
which are appropriately deposited or grown on substrates and layers soldered together …
which are appropriately deposited or grown on substrates and layers soldered together …
Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability
M Borga, K Geens, MA Khan, D Cingu… - Applied Physics …, 2024 - pubs.aip.org
This work addresses the impact of the Mg activation anneal step and the resulting acceptor
concentration on the channel mobility and VT stability of vertical MOSFETs. Increasing the …
concentration on the channel mobility and VT stability of vertical MOSFETs. Increasing the …
Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy
M El Amrani, J Buckley, T Kaltsounis, DP Arguello… - Crystals, 2024 - mdpi.com
In this work, a GaN-on-Si quasi-vertical Schottky diode was demonstrated on a locally grown
n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density …
n-GaN drift layer using Selective Area Growth (SAG). The diode achieved a current density …
Prediction of ferromagnetism in GaN: Ag and SiC: Ag nanotubes
VN Jafarova, SS Rzayeva, IC Scurtu… - Advances in Natural …, 2024 - iopscience.iop.org
Abstract Ferromagnetism in single-walled (6, 0) GaN (SiC): Ag nanotubes were studied
based on ab initio simulations within a pseudopotential method. For the GaN: Ag single …
based on ab initio simulations within a pseudopotential method. For the GaN: Ag single …
氨热法GaN 单晶生长的位错密度演变研究.
夏政辉， 李腾坤， 任国强， 解凯贺… - Journal of Synthetic …, 2024 - search.ebscohost.com
氮化镓单晶具有高击穿电压, 直接带隙, 高饱和电子漂移速率, 良好的化学稳定性等特性,
在光电子器件和大功率电子器件中有广泛的应用. 然而异质外延氮化镓会产生高位错密度 …
在光电子器件和大功率电子器件中有广泛的应用. 然而异质外延氮化镓会产生高位错密度 …
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
M Kamiński, A Taube, J Tarenko… - … status solidi (a), 2023 - Wiley Online Library
Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on
ammonothermally grown bulk GaN substrates have been reported. A number of …
ammonothermally grown bulk GaN substrates have been reported. A number of …
Exploring the Frontier of Semiconductor Technologies: Innovations, Sustainability and Future Opportunities—A Review
L Yeboah, P Agyemang, AA Malik, P Acheampong… - 2024 - preprints.org
Semiconductor technology is the backbone of modern innovations, propelling technological
advancements in industries such as electronics, renewable energy, telecommunications …
advancements in industries such as electronics, renewable energy, telecommunications …