Transparent electromagnetic interference shielding materials using MXene
Y Deng, Y Chen, W Liu, L Wu, Z Wang, D Xiao… - Carbon …, 2024 - Wiley Online Library
With the rapid advancement of terahertz technologies, electromagnetic interference (EMI)
shielding materials are needed to ensure secure electromagnetic environments. Enormous …
shielding materials are needed to ensure secure electromagnetic environments. Enormous …
Interaction of an ultrathin zinc surface passivation layer with a room temperature-deposited Al-doped ZnO film leading to highly improved electrical transport properties
In this study, we have demonstrated the interaction of an ultrathin Zn surface passivation
layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly …
layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly …
Influence of annealing temperature on structural, electrical, and optical properties of 80 nm thick indium-doped tin oxide on borofloat glass
AM Abd-Elnaiem, A Hakamy - Journal of Materials Science: Materials in …, 2022 - Springer
The influences of annealing temperature (473–573 K) on the crystal structure,
linear/nonlinear optical parameters, and electrical characteristics of 80 nm thick indium …
linear/nonlinear optical parameters, and electrical characteristics of 80 nm thick indium …
Charge storage capabilities of fractal porous silicon obtained using simple metal assisted porosification method
Simpler methods for fabricating electrodes for charge storage applications are required
because electrode materials have appreciable significance to enhance the electrochemical …
because electrode materials have appreciable significance to enhance the electrochemical …
Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis (dimethylamino) tin, and ozone precursor system
H Salami, A Uy, A Vadapalli, C Grob… - Journal of Vacuum …, 2019 - pubs.aip.org
Indium oxide (IO) and indium tin oxide (ITO) are widely used in optoelectronics applications
as a high quality transparent conducting oxide layer. A potential application of these …
as a high quality transparent conducting oxide layer. A potential application of these …
Degenerate and non-degenerate In2O3 thin films by pulsed electron beam deposition
M Nistor, F Gherendi, J Perrière - Materials Science in Semiconductor …, 2018 - Elsevier
Pulsed electron beam deposition (PED) was used to grow indium oxide thin films on c-cut
sapphire single crystalline substrates between room temperature and 500° C under oxygen …
sapphire single crystalline substrates between room temperature and 500° C under oxygen …
Quasilinear Kane conduction band model in nitrogen-doped indium tin oxide
M Markwitz, SY Back, EXM Trewick, PP Murmu, T Mori… - Physical Review B, 2024 - APS
The band nonparabolicity of indium tin oxide (ITO) polycrystalline thin films is investigated
with the quasilinear Kane model through Seebeck and Hall effect measurements. We report …
with the quasilinear Kane model through Seebeck and Hall effect measurements. We report …
Electrochromic properties of tungsten oxide (WO3) thin films on lexan (polycarbonate) substrates prepared with neon as sputter gas
KU Kumar, A Subrahmanyam - Materials Research Express, 2019 - iopscience.iop.org
Electrochromic materials change color reversibly by applying an external DC voltage. One
among the many emerging application of electrochromics is the smart windows. Tungsten …
among the many emerging application of electrochromics is the smart windows. Tungsten …
Effect of annealing temperature on the structure and dielectric characterization of ITO thin films on a boro-float substrate prepared by radio frequency sputtering
The effect of annealing temperature (Ta= 200, 250, and 300° C) on the structural properties,
ac conductivity, and complex dielectric constants (and) of indium-doped tin oxide (ITO) thin …
ac conductivity, and complex dielectric constants (and) of indium-doped tin oxide (ITO) thin …
Half-wave voltage controllable optical voltage sensor with arbitrary electric field direction modulation
Y Lin, Q Xu, J Li, N Xie, Y Yang - Measurement Science and …, 2024 - iopscience.iop.org
An optical voltage sensor with an arbitrary electric field direction modulation (AEFDM) mode
is proposed to increase the half-wave voltage. The mode is realized by heterogeneous …
is proposed to increase the half-wave voltage. The mode is realized by heterogeneous …