Physical mechanisms responsible for nondestructive single-event effects in digital
microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits …

This book introduces the basic concepts necessary to understand Single Event phenomena
which could cause random performance errors and catastrophic failures to electronics …

Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …

In many computer systems, the contents of memory are protected by an error detection and
correction (EDAC) code. Bit-flips caused by single event upsets (SEU) are a well-known …

Smaller, lighter, and cost-effective satellite design is a major field of research today. Since
such satellites are equipped with limited resources, there is a huge demand for low-power …

Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells
to change logic states in a high density CMOS SRAM. A majority of the upsets produced by …

Academic 128/spl times/128 bit structures are simulated to study soft error cross sections
induced by high-energy nucleons (n/p) in SRAM memories. The distributions of secondary …

This paper presents the results of a 10-year study on radiation effects in commercial-off-the-
shelf (COTS) memory devices operating within the on-board data handling systems of five …

Observations of single-event effects (SEEs) and total-dose degradation are presented for the
data-handling system of the S80/T and KITSAT-1 micro-satellites, which have been …

As the integration of components increases, their upset and latch-up sensitivity becomes
more critical for their use in space. Moreover, the complexity of such devices implies special …