Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

E Longo, L Locatelli, P Tsipas, A Lintzeris… - … Applied Materials & …, 2023 - ACS Publications
Properly tuning the Fermi level position in topological insulators is of vital importance to
tailor their spin-polarized electronic transport and to improve the efficiency of any functional …

Two pairs of topological Shockley surface bands in the ternary compound

HJ Qian, JM Wang, DY Wang, Q Jiang, HM Zha, WJ Liu… - Physical Review B, 2022 - APS
The electronic states in ternary compound SnSb 2 Te 4 wwere studied by first-principles and
tight-binding calculations, and two pairs of topological Shockley surface bands below its …

Topological insulator nanowires: growth, characterization and superconducting proximity effect

F Münning - 2024 - kups.ub.uni-koeln.de
Topological Insulator (TI) nanowires have attracted attention in recent years, not only
because of the novel physics that are to be discovered in such systems, but also because …

Topological properties of large-area MOCVD-grown Sb2Te3, Bi2Te3 and their combination

L Locatelli - 2023 - boa.unimib.it
Chalcogenide thin films, such as Bi2Te3 and Sb2Te3 have been under the scientific
community's attention since long, due to their application as thermoelectric material …