[HTML][HTML] Epitaxial Growth of Ga2O3: A Review
Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG)
semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric …
semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric …
Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers
AY Polyakov, EB Yakimov… - Journal of Physics D …, 2024 - iopscience.iop.org
The material system of ultra-wide bandgap Ga 2 O 3 has already shown great promise in the
field of solar-blind photodetectors with high photoresponsivity, high photoresponsivity gain …
field of solar-blind photodetectors with high photoresponsivity, high photoresponsivity gain …
Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
AY Polyakov, DS Saranin, IV Shchemerov… - Scientific Reports, 2024 - nature.com
Abstract p-NiO/n-Ga2O3 heterojunction (HJ) diodes exhibit much larger changes in their
properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the …
properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the …
Hybrid Schottky and heterojunction vertical β-Ga 2 O 3 rectifiers
Junction barrier Schottky design Ga2O3 rectifiers allow for a combination of low turn-on
voltage and high breakdown voltage. Ni/Au/Ga2O3 Schottky rectifiers and NiO/Ga2O3 …
voltage and high breakdown voltage. Ni/Au/Ga2O3 Schottky rectifiers and NiO/Ga2O3 …
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Ultra-wide bandgap (UWBG) NiO/β-Ga 2 O 3 p–n junction has recently emerged as a key
building block for emerging electronic and optoelectronic devices. However, the long-term …
building block for emerging electronic and optoelectronic devices. However, the long-term …
Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
Power Schottky barrier diodes (SBDs) face an inherent trade-off between forward
conduction loss and reverse blocking capability. This limitation becomes more severe for …
conduction loss and reverse blocking capability. This limitation becomes more severe for …
Comparison of Ti/Au, Ni/Au, and Sc/Au ohmic contact metal stacks on (Al0. 18Ga0. 82) 2O3
Three different metal stacks, namely Ti/Au, Ni/Au and Sc/Au, were examined as Ohmic metal
contacts to Si-doped, n-type (4.1× 10 19 cm− 3), 300-nm thick (Al 0.18 Ga 0.82) 2 O 3 layers …
contacts to Si-doped, n-type (4.1× 10 19 cm− 3), 300-nm thick (Al 0.18 Ga 0.82) 2 O 3 layers …
Perspective on breakdown in Ga2O3 vertical rectifiers
While Ga 2 O 3 rectifiers have shown promising performance, there is a lack of consensus
on the significance of the few device breakdown results above 10 kV. We provide some …
on the significance of the few device breakdown results above 10 kV. We provide some …
[HTML][HTML] Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions
AY Polyakov, EB Yakimov, DS Saranin… - Journal of Applied …, 2024 - pubs.aip.org
We report the electrical properties, deep trap spectra, and diffusion lengths of non-
equilibrium carriers in Ni Schottky diodes and NiO/Ga 2 O 3 heterojunctions (HJs) prepared …
equilibrium carriers in Ni Schottky diodes and NiO/Ga 2 O 3 heterojunctions (HJs) prepared …
Switching of kV-class Ga2O3 heterojunction vertical rectifiers
Switching of vertical 6.1 kV/4A NiO/Ga 2 O 3 rectifiers from voltages up to 1.45 kV showed
reverse recovery times of 75 ns, current slew rate of 39.0 A/μs, and energy loss of∼ 105 μW …
reverse recovery times of 75 ns, current slew rate of 39.0 A/μs, and energy loss of∼ 105 μW …