Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …

Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …

High-voltage vertical Ga 2 O 3 MISFETs are developed employing halide vapor phase
epitaxial (HVPE) layers on bulk Ga 2 O 3 (001) substrates. The low charge concentration of …

A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …

With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …

This book provides comprehensive coverage of the new wide-bandgap semiconductor
gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent …

With a wide band gap, high critical breakdown voltage and commercially available
substrates, Ga 2 O 3 is a promising material for next-generation power electronics. Like most …

As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …

Abstract β-Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …