Smooth and crack-free (0002) AlN thick films (∼ 30 μm) were epitaxially grown on trench-
patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride …

Currently, we stand at the forefront of revolutionary advancements in communication
technology. The escalating demands of advanced communication necessitate enhanced …

The effects of substrate surface polarity, substrate temperature and deposition rate on the
AlN growth with chemical vapor deposition method were studied with the Stillinger–Weber …

The fabrication of metal oxide semiconductor heterostructures is a major way to enhance
their properties in photocatalytic and antibacterial applications. In the present work, ZnO/α …

In this work, AlN films was grown using gallium (Ga) as surfactant on 4 off− axis 4H− SiC
substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that …

The gas-phase reaction pathways of diethylzinc (DEZn) and t-butanol (t-BuOH) precursors is
investigated by employing quantum chemical methods with density functional theory …

Piezoelectric properties of polycrystalline AlN films are strongly dependent on the texture of
the material. For a number of applications, such as microelectromechanical devices and …