Thin‐film ferroelectrics

A Fernandez, M Acharya, HG Lee, J Schimpf… - Advanced …, 2022 - Wiley Online Library
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Prospective of semiconductor memory devices: from memory system to materials

CS Hwang - Advanced Electronic Materials, 2015 - Wiley Online Library
The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining.
The conventional strategy for meeting such demand, ie shrinking of the memory cell size …

Enhanced ferroelectricity in ultrathin films grown directly on silicon

SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu… - Nature, 2020 - nature.com
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …

Nonvolatile ferroelectric domain wall memory integrated on silicon

H Sun, J Wang, Y Wang, C Guo, J Gu, W Mao… - Nature …, 2022 - nature.com
Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon

S Abel, F Eltes, JE Ortmann, A Messner, P Castera… - Nature materials, 2019 - nature.com
The electro-optical Pockels effect is an essential nonlinear effect used in many applications.
The ultrafast modulation of the refractive index is, for example, crucial to optical modulators …

Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation

G Dong, S Li, M Yao, Z Zhou, YQ Zhang, X Han, Z Luo… - Science, 2019 - science.org
Ferroelectrics are usually inflexible oxides that undergo brittle deformation. We synthesized
freestanding single-crystalline ferroelectric barium titanate (BaTiO3) membranes with a …

Steep-slope hysteresis-free negative capacitance MoS2 transistors

M Si, CJ Su, C Jiang, NJ Conrad, H Zhou… - Nature …, 2018 - nature.com
The so-called Boltzmann tyranny defines the fundamental thermionic limit of the
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

MH Park, YH Lee, HJ Kim, YJ Kim, T Moon… - Advanced …, 2015 - Wiley Online Library
The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …

Negative capacitance in a ferroelectric capacitor

AI Khan, K Chatterjee, B Wang, S Drapcho, L You… - Nature materials, 2015 - nature.com
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy
dissipation in conventional electronics, often termed as Boltzmann Tyranny,,,,. Negative …

Correlated metals as transparent conductors

L Zhang, Y Zhou, L Guo, W Zhao, A Barnes… - Nature materials, 2016 - nature.com
The fundamental challenge for designing transparent conductors used in photovoltaics,
displays and solid-state lighting is the ideal combination of high optical transparency and …