A bottom-up approach starting with the development of new Hf precursors for plasma-
enhanced atomic layer deposition (PEALD) processes for HfO2 followed by in situ thin-film …

The unique architecture of iridescent Morpho butterfly scales is known to exhibit different
optical responses to various vapours. However, the mechanism behind this phenomenon is …

For practical applications of photosynaptic devices in neuromorphic systems, photosynaptic
transistors prepared using TiO2 channels and TiO2/Al2O3 deep trap interfaces exhibit high …

Metal-insulator-metal structures based on ultrathin high-k dielectric films are underpinning a
rapidly increasing number of devices and applications. Here, we report detailed electrical …

HfO 2/Al 2 O 3 nanolaminate was deposited on a Si substrate by plasma-enhanced atomic
layer deposition at 150 C with in situ plasma treatment. Unilayer HfO 2 and Al 2 O 3 films …

The development of metallic single-electron transistor (SET) depends on the downscaling
and the electrical properties of its tunnel junctions (TJs). These TJs should insure high-ON …

Nanoscale metallic tunnel junctions are important elements of state-of-the-art technologies
including superconducting qubits, single electronics, nanospintronics, and caloritronics. The …

A method of simulating metallic-island single electron transistors (SETs) and small circuits
which speeds up the design-fabrication-characterization cycle is proposed. The method …

In this paper, we show a process for the fabrication of planar sub-attofarad capacitance
metal-insulator-metal tunnel junctions with nanometer size. We show the engineering of the …

Pt nanoparticles in a Al 2 O 3 dielectric matrix thin films are elaborated by means of atomic
layer deposition. These nanostructured thin films are integrated in vertical and planar test …