Memristive technology has been rapidly emerging as a potential alternative to traditional
CMOS technology, which is facing fundamental limitations in its development. Since oxide …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

With its comprehensive coverage, this reference introduces readers to the wide topic of
resistance switching, providing the knowledge, tools, and methods needed to understand …

Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …

Resistive switching random access memory (RRAM), also known as memristor, is regarded
as an emerging nonvolatile memory and computing-in-memory technology to address the …

Memristors have attracted considerable attention as one of the four basic circuit elements
besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices …

The emergence of perovskite-based memristors associated with the migration of ions has
attracted attention for use in overcoming the limitations of the von Neumann computing …

Organolead halide perovskite materials open up a new era for developing low-cost and high
efficiency solar cells due to their simple and inexpensive fabrication process, superior light …

A potential replacement for current charge-based memory technologies in the nanoscale
device regime is a form of resistance change memory (RRAM) which utilizes cation transport …

The strongly nonlinear switching kinetics of electrochemical metallization memory (ECM)
cells are investigated using an advanced 1D simulation model. It is based on the …