Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
Abstract Herein we investigate a (001)-oriented GaAs1− x Bi x/GaAs structure possessing Bi
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
T Paulauskas, V Pačebutas, R Butkutė… - Nanoscale Research …, 2020 - Springer
The distribution of alloyed atoms in semiconductors often deviates from a random
distribution which can have significant effects on the properties of the materials. In this study …
distribution which can have significant effects on the properties of the materials. In this study …
Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys
Photoreflectance (PR) and photoluminescence (PL) spectra of GaAs 1− x Bi x alloys grown
by metalorganic vapor phase epitaxy, for x up to 4.8%, were measured at temperatures …
by metalorganic vapor phase epitaxy, for x up to 4.8%, were measured at temperatures …
Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1− xBix epilayers
We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga
(As, Bi) epilayers grown by low-temperature (< 300 C) molecular beam epitaxy (MBE) on …
(As, Bi) epilayers grown by low-temperature (< 300 C) molecular beam epitaxy (MBE) on …
Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
CM Krammel, M Roy, FJ Tilley, PA Maksym… - Physical Review …, 2017 - APS
We show the potential of cross-sectional scanning tunneling microscopy to address
structural properties of dilute III-V bismides by investigating Bi: InP. Bismuth atoms down to …
structural properties of dilute III-V bismides by investigating Bi: InP. Bismuth atoms down to …
Impact of rotation rate on bismuth saturation in GaAsBi grown by molecular beam epitaxy
GaAs 1− x Bi x has been grown by solid-source molecular beam epitaxy using varying
substrate rotation rates. Changes in local bismuth saturation were studied by varying the …
substrate rotation rates. Changes in local bismuth saturation were studied by varying the …
[HTML][HTML] GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation
We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-
coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally …
coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in nominally …
The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films
K Forghani, Y Guan, A Wood, S Babock… - Chemical Vapor …, 2015 - Wiley Online Library
This study compares the effectiveness of two Bi sources, trimethyl bismuth (TMBi) and
triethyl bismuth (TEBi), in the growth of GaAs1‐yBiy thin films. Through optimization of the …
triethyl bismuth (TEBi), in the growth of GaAs1‐yBiy thin films. Through optimization of the …
First-principles studies on molecular beam epitaxy growth of
We investigate the molecular beam epitaxy (MBE) growth of GaA s 1− x B ix film using
density functional theory with spin-orbit coupling to understand the growth of this film …
density functional theory with spin-orbit coupling to understand the growth of this film …