Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application

Z Shen, C Zhao, Y Qi, W Xu, Y Liu, IZ Mitrovic, L Yang… - Nanomaterials, 2020 - mdpi.com
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

F Zahoor, FA Hussin, UB Isyaku, S Gupta, FA Khanday… - Discover Nano, 2023 - Springer
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …

Ultralow–switching current density multilevel phase-change memory on a flexible substrate

AI Khan, A Daus, R Islam, KM Neilson, HR Lee… - Science, 2021 - science.org
Phase-change memory (PCM) is a promising candidate for data storage in flexible
electronics, but its high switching current and power are often drawbacks. In this study, we …

Flexible memristor-based nanoelectronic devices for wearable applications: a review

Z Rao, X Wang, S Mao, J Qin, Y Yang… - ACS Applied Nano …, 2023 - ACS Publications
In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …

Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing

D Kumar, S Shrivastava, A Saleem… - ACS Applied …, 2022 - ACS Publications
In today's new era, multifunctional devices are most prominent due to their compact design,
reduction in operating cost, and reduced need of being limited to single functional devices …

A heterogeneous TiO2/SrTiO3 coating on titanium alloy with excellent photocatalytic antibacterial, osteogenesis and tribocorrosion properties

Y Si, H Liu, H Yu, X Jiang, D Sun - Surface and Coatings Technology, 2022 - Elsevier
In order to meet the clinical demand for titanium implants, the heterogeneous structure of TiO
2/SrTiO 3 coating was in situ fabricated on the surface of Ti6Al4V alloy by a facile way. The …

ZnO and ZnO-based materials as active layer in resistive random-access memory (RRAM)

E Nowak, E Chłopocka, M Szybowicz - Crystals, 2023 - mdpi.com
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …

Enhanced linearity in CBRAM synapse by post oxide deposition annealing for neuromorphic computing applications

CL Hsu, A Saleem, A Singh, D Kumar… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Artificial synapse with good linearity is a critical issue in conductive bridging random access
memory (CBRAM) synaptic device to accomplish an efficient learning approach in the …

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

MC Wu, JY Chen, YH Ting, CY Huang, WW Wu - Nano Energy, 2021 - Elsevier
Resistive random access memory (RRAM) is a potential nonvolatile memory to apply in
large-scale integration systems due to its high switching speed and cost-effective priority …

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

AS Sokolov, H Abbas, Y Abbas… - Journal of …, 2021 - iopscience.iop.org
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …