Comprehensive review on electrical noise analysis of TFET structures
Abstract Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for
conventional CMOS due to their advantages like very low leakage current and steep sub …
conventional CMOS due to their advantages like very low leakage current and steep sub …
Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation
This paper proposes a novel dielectric modulated step-graded germanium source biotube
FET for label-free biosensing applications. Its integrated structure and unique design …
FET for label-free biosensing applications. Its integrated structure and unique design …
Optimizing u-shape FinFETs for sub-5nm technology: performance analysis and device-to-circuit evaluation in digital and analog/radio frequency applications
FinFET is considered as the potential contender in the era of Multigate FETs. This
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study
This paper, numerically assesses the analog/RF performance of nanoscale negative
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …
Mid-wave infrared optical receiver based on an InAsSb-nBn photodetector using the barrier doping engineering technique for low-power satellite optical wireless …
M Shaveisi, P Aliparast - Applied Optics, 2023 - opg.optica.org
This paper proposes a new nBn photodetector (nBn-PD) based on InAsSb with a barrier
doping engineering technique [core–shell doped barrier (CSD-B) nBn-PD] for utilization as a …
doping engineering technique [core–shell doped barrier (CSD-B) nBn-PD] for utilization as a …
Double gate double-channel AlGaN/GaN MOS HEMT and its applications to LNA with Sub-1 dB noise figure
The manuscript proposes a novel double gate double-channel AlGaN/GaN MOS high
electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) …
electron mobility transistor (DG-DC-MOS-HEMT) for the low noise amplifier (LNA) …
Novel octa-graphene-like structures based on GaP and GaAs
JAS Laranjeira, NF Martins, SA Azevedo… - Journal of Molecular …, 2023 - Springer
Context The discovery of graphene gave way to the search for new two-dimensional
structures. In this regard, octa-graphene is a carbon allotrope consisting of 4-and 8 …
structures. In this regard, octa-graphene is a carbon allotrope consisting of 4-and 8 …
Junctionless In0.3Ga0.7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications
In this paper, a junctionless (JL) In0. 3Ga0. 7As/GaAs FET with a shell-doped channel
(SDCh) for high-frequency electronics is investigated, and different electrical properties of …
(SDCh) for high-frequency electronics is investigated, and different electrical properties of …
High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters
In junctionless (JL) transistors, impurity scattering limits the carrier velocity within a channel,
disturbing its performance in analog/RF applications. For the first time, the Si/Si 0.5 Ge 0.5 …
disturbing its performance in analog/RF applications. For the first time, the Si/Si 0.5 Ge 0.5 …
Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications
Impurity scattering in junctionless transistors reduces electron velocity in the channel, so the
performance of analog/RF at high frequencies degrades. For the first time, this study offers …
performance of analog/RF at high frequencies degrades. For the first time, this study offers …