Colloidal approaches to zinc oxide nanocrystals

J van Embden, S Gross, KR Kittilstved… - Chemical …, 2022 - ACS Publications
Zinc oxide is an extensively studied semiconductor with a wide band gap in the near-UV. Its
many interesting properties have found use in optics, electronics, catalysis, sensing, as well …

Effect of Ga content on magnetic properties of BaFe12−xGaxO19/epoxy composites

O Yakovenko, O Lazarenko, L Matzui… - Journal of Materials …, 2020 - Springer
The article reports about the effect of Ga content on magnetic properties of 30 wt% BaFe 12−
x Ga x O 19/epoxy (x= 0.1, 0.3, 0.6, 0.9 and 1.2) composites with uniform and aligned (due to …

Multi-scale defects in ZnO thermoelectric ceramic materials co-doped with In and Ga

ATT Pham, TA Luu, NK Pham, HKT Ta, TH Nguyen… - Ceramics …, 2020 - Elsevier
In this work, several X-ray and nuclear analysis techniques were used to examine ZnO
materials co-doped with In and Ga, or IGZO materials. X-ray diffraction analysis, energy …

[PDF][PDF] A review of thermoelectric ZnO nanostructured ceramics for energy recovery

MA Mohammed, I Sudin, AM Noor, S Rajoo… - International Journal of …, 2018 - core.ac.uk
The thermoelectric devices have the ability to convert heat energy into electrical energy
without required moving components, having good reliability however their performance …

A simple approach to the fabrication of fluorine-doped zinc oxide thin films by atomic layer deposition at low temperatures and an investigation into the growth mode

YJ Choi, HH Park - Journal of Materials Chemistry C, 2014 - pubs.rsc.org
A simple low-temperature fabrication of fluorine-doped ZnO (ZnO: F) thin films by atomic
layer deposition (ALD) was investigated and the growth mode of the films was analyzed. A …

Thermoelectric transport properties of naturally nanostructured Ga–ZnO ceramics: Effect of point defect and interfaces

X Liang - Journal of the European Ceramic Society, 2016 - Elsevier
Point defects and nanoscale interfaces have been found of significant influence on the
phonon and electrical transport properties. In the preset work, we present the high …

Differences in n-type doping efficiency between Al-and Ga-ZnO films

M Gabás, A Landa-Cánovas… - Journal of Applied …, 2013 - pubs.aip.org
A careful and wide comparison between Al and Ga as substitutional dopants in the ZnO
wurtzite structure is presented. Both cations behave as n-type dopants and their inclusion …

Inversion boundaries and phonon scattering in Ga: ZnO thermoelectric compounds

E Guilmeau, P Díaz-Chao, OI Lebedev… - Inorganic …, 2017 - ACS Publications
We investigated the high-temperature thermoelectric properties of Ga: ZnO bulk compounds,
synthesized using a simple and scalable solid-state process. The effects of a low gallium …

ZnO thin films containing aliovalent ions for NO2 gas sensor activated by visible light

V Paolucci, J De Santis, L Lozzi, M Rigon… - Ceramics …, 2021 - Elsevier
In this paper we report on the combined visible-light (red λ= 630 nm; green λ= 570 nm;
purple-blue λ= 430 nm) and mild thermal-activation modes (25° C–100° C) towards ppb …

Tunable mid IR plasmon in GZO nanocrystals

MK Hamza, JM Bluet, K Masenelli-Varlot, B Canut… - Nanoscale, 2015 - pubs.rsc.org
Degenerate metal oxide nanoparticles are promising systems to expand the significant
achievements of plasmonics into the infrared (IR) range. Among the possible candidates, Ga …