Chemical Vapour Deposition (CVD) of films and coatings involve the chemical reactions of
gaseous reactants on or near the vicinity of a heated substrate surface. This atomistic …

Although the deposition of films by gas phase photochemical reactions was first reported in
the scientific literature more than 50 years ago [1, 2], only since the late 1970s has the …

Herein, we review the remarkable range of modifications to materials properties associated
with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors …

We report mass spectrometric studies of the products of thermal decomposition of
triethylgallium (TEGa), and trimethylgallium (TMGa) adsorbed on Ga-stabilized GaAs (100) …

A key factor in engineering integrated devices such as electro-optic switches or waveguides
is the patterning of high quality crystalline thin films into specific geometries. In this …

A multiphoton ionization-mass spectrometric study has been made on laser ablation of
polymethylmethacrylate and polystyrene films by an excimer laser at 308 nm." Unzipping" …

Ar+ laser-assisted epitaxy of GaAs, GaP, and GaAsP is studied. Laser irradiation during
growth enhances growth rates of the three kinds of films. Growth rates of the laser-irradiated …

Integrating different semiconductor materials into an epitaxial device structure offers
additional degrees of freedom to select for optimal material properties in each layer …

Selective growth of GaAs using an Ar+ laser beam is reported. The laser irradiation during
growth in the substrate temperature range 400-525 C forms a GaAs spot of 400 11m in …

We report selected area growth of GaAs by XeF excimer laser induced pyrolysis of
triethylgallium (TEGa) adsorbed on GaAs (100). TEGa dissociatively chemisorbs at 400° C …