High dielectric constant gate oxides for metal oxide Si transistors
J Robertson - Reports on progress in Physics, 2005 - iopscience.iop.org
The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …
Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
G He, L Zhu, Z Sun, Q Wan, L Zhang - Progress in Materials Science, 2011 - Elsevier
Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …
scaling technology in recent years, innovation in transistor structures and integration of …
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
Transparent electronic devices formed on flexible substrates are expected to meet emerging
technological demands where silicon-based electronics cannot provide a solution …
technological demands where silicon-based electronics cannot provide a solution …
Lanthanide oxide/hafnium oxide dielectric layers
KY Ahn, L Forbes - US Patent 7,192,824, 2007 - Google Patents
3,357,961 A 12/1967 Makowski et al. 4,058.430 A 11/1977 Suntola et al. 4.413, 022 A 11,
1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …
1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …
Lanthanum hafnium oxide dielectrics
KY Ahn, L Forbes - US Patent 7,235,501, 2007 - Google Patents
US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …
Lanthanide oxide/hafnium oxide dielectric layers
KY Ahn, L Forbes - US Patent 7,312,494, 2007 - Google Patents
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …
Atomic layer deposited titanium silicon oxide films
KY Ahn, L Forbes - US Patent 7,687,409, 2010 - Google Patents
3,357,961 A 12/1967 Makowski et al. 3,381,114. A 4, 1968 Nakanuma 4,058.430 A 11, 1977
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …
Suntola et al. 4,215,156 A 7, 1980 Dalal et al. 4,302.620 A 11, 1981 Chu 4.333, 808 A …
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
An overview of our recent work on ultrathin (< 100 Å) films of metal oxides deposited on
silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3 …
silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3 …
Oxygen “getter” effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X= Ga, Sc, Y, La) transistors
In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen
binding metal ion (“oxygen getter”), X, functions to control O vacancies and enhance lattice …
binding metal ion (“oxygen getter”), X, functions to control O vacancies and enhance lattice …
A thermodynamic approach to selecting alternative gate dielectrics
DG Schlom, JH Haeni - Mrs Bulletin, 2002 - cambridge.org
As a first step in the identification of suitable alternative gate dielectrics for metal oxide
semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic …
semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic …