Miniature MEMS switches for RF applications
This paper presents a new way to design MEMS (microelectromechanical system) metal
contact switches for RF applications using miniature MEMS cantilevers. A single 25× 25 μm …
contact switches for RF applications using miniature MEMS cantilevers. A single 25× 25 μm …
The super-lattice castellated field effect transistor (SLCFET): A novel high performance transistor topology ideal for RF switching
RS Howell, EJ Stewart, R Freitag… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
NGES reports the development of a novel transistor structure based on a GaN super-lattice
channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect …
channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect …
Vanadium oxide thin-film variable resistor-based RF switches
Vanadium dioxide (VO 2) is a unique phase change material (PCM) that possesses a metal-
to-insulator transition property. Pristine VO 2 has a negative temperature coefficient of …
to-insulator transition property. Pristine VO 2 has a negative temperature coefficient of …
[HTML][HTML] Design and fabrication of a series contact RF MEMS switch with a novel top electrode
Q Wu, H Guo, Q Liu, G Zhu, J Wang, Y Cao… - Nanotechnology and …, 2023 - pubs.aip.org
Radio-frequency (RF) micro-electro-mechanical-system (MEMS) switches are widely used in
communication devices and test instruments. In this paper, we demonstrate the structural …
communication devices and test instruments. In this paper, we demonstrate the structural …
Origin and optimization of RF power handling limitations in inline phase-change switches
N El-Hinnawy, P Borodulin, MR King… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The power handling capabilities of inline phase-change switches (IPCS's) at radio
frequencies (RF) have been correlated with the dc threshold voltage (V th) of the devices …
frequencies (RF) have been correlated with the dc threshold voltage (V th) of the devices …
Low loss, high performance 1-18 GHz SPDT based on the novel super-lattice castellated field effect transistor (SLCFET)
RS Howell, EJ Stewart, R Freitag… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
A low loss, high isolation, broadband RF switch has been developed using a novel type of
field effect transistor structure that exploits the use of a super-lattice structure in combination …
field effect transistor structure that exploits the use of a super-lattice structure in combination …
Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications
RS Howell, EJ Stewart, R Freitag… - 2016 IEEE MTT-S …, 2016 - ieeexplore.ieee.org
The Super-Lattice Castellated Field Effect Transistor (SLCFET) uses a super-lattice in the
channel region to form multiple parallel current paths in conjunction with castellations …
channel region to form multiple parallel current paths in conjunction with castellations …
Low-order filter response enhancement in reconfigurable resonator arrays
EJ Naglich, D Peroulis… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Reconfigurable resonator arrays offer the unique advantage of providing an adaptive order
filter response by appropriately routing signals of interest through the desired resonators …
filter response by appropriately routing signals of interest through the desired resonators …
High-performance SLCFETs for switched filter applications
FET-based switched filters do not occupy a large space in the literature due to the high loss
of the switches relative to other technologies. The Super-Lattice Castellated Field Effect …
of the switches relative to other technologies. The Super-Lattice Castellated Field Effect …
[PDF][PDF] GeTe 相变射频开关综述
帅陈杨， 付云起， 郑月军， 陈强， 王忠宝 - 电子学报, 2022 - ejournal.org.cn
GeTe 相变射频(Radio Frequency, RF) 开关作为一门新兴的射频开关技术,
一经提出便迅速成为研究热点. 该开关利用GeTe 相变材料热致相变特性 …
一经提出便迅速成为研究热点. 该开关利用GeTe 相变材料热致相变特性 …