Writing magnetic memory with ultrashort light pulses
Laser pulses are the shortest stimulus known to control the magnetization of materials and to
switch magnetic devices on the picosecond to femtosecond timescales. Femtosecond laser …
switch magnetic devices on the picosecond to femtosecond timescales. Femtosecond laser …
Spin-transfer torque switched magnetic tunnel junction for memory technologies
JZ Sun - Journal of Magnetism and Magnetic Materials, 2022 - Elsevier
A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …
Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
Current-induced spin-transfer torques (STT) and spin–orbit torques (SOT) enable the
electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random …
electrical switching of magnetic tunnel junctions (MTJs) in non-volatile magnetic random …
Basic principles of STT-MRAM cell operation in memory arrays
AV Khvalkovskiy, D Apalkov, S Watts… - Journal of Physics D …, 2013 - iopscience.iop.org
For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …
requirements on their performance. In this work we review some of these requirements and …
Magnetoresistive random access memory
In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …
presented. The various MRAM generations are described with a particular focus on spin …
Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
H Sato, ECI Enobio, M Yamanouchi, S Ikeda… - Applied Physics …, 2014 - pubs.aip.org
We investigate properties of perpendicular anisotropy magnetic tunnel junctions (MTJs) with
a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm …
a recording structure of MgO/CoFeB/Ta/CoFeB/MgO down to junction diameter (D) of 11 nm …
[HTML][HTML] Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
We report electric-field-induced switching with write energies down to 6 fJ/bit for switching
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …
Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a
Co/MgO/Ta nanosquare driven by spin Hall torque from an in-plane current flowing in an …
Co/MgO/Ta nanosquare driven by spin Hall torque from an in-plane current flowing in an …
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
H Sato, M Yamanouchi, S Ikeda, S Fukami… - Applied Physics …, 2012 - pubs.aip.org
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a
recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 …
recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 …
Spin dice: A scalable truly random number generator based on spintronics
A Fukushima, T Seki, K Yakushiji, H Kubota… - Applied Physics …, 2014 - iopscience.iop.org
Generation of practical random numbers (RNs) by a spintronics-based, scalable truly RN
generator called" spin dice" was demonstrated. The generator utilizes the stochastic nature …
generator called" spin dice" was demonstrated. The generator utilizes the stochastic nature …