We have performed an extensive study of the effects of border traps (near-interfacial oxide
traps that can communicate with the underlying Si over a wide range of time scales) on the …

We have identified several features of the 1/f noise and radiation response of metal‐oxide‐
semiconductor (MOS) devices that are difficult to explain with standard defect models. To …

We present a unified phenomenological model of the low-field charge-buildup phenomenon
at ultrathin SiO 2-Si interfaces during negative-bias stresses at elevated temperatures and …

Convergent lines of evidence are reviewed which show that near-interfacial oxide traps
(border traps) that exchange charge with the Si can strongly affect the performance …

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally
investigated in a large number of depleted silicon nano-and microstructures. The resistance …

The transport and reactions of hydrogen-related species play critical roles in determining the
ionizing radiation response and long-term reliability of Si-based metal-oxide-semiconductor …

We have combined thermally stimulated‐current (TSC) and capacitance–voltage (C–V)
measurements to estimate oxide, interface, and effective border trap densities in 6–23 nm …

Herein, a novel technique to monitor the quality and reliability of thin nano‐scale dielectric
films is suggested. The method is based on the modification of the current stress technique …

Threshold-voltage and charge-pumping measurements are combined to estimate densities
of radiation induced bulk-oxide, interface, and border traps in transistors with soft 45-nm …

We report on the study of large two-level, low-frequency resistance fluctuations in 1-μ m 2
metal-oxide-silicon tunnel diodes, which are due to the strongly correlated emptying and …