Origin of the nonradiative decay of bound excitons in GaN nanowires
We investigate the origin of the fast recombination dynamics of bound and free excitons in
GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy …
GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy …
Dynamics of stacking faults luminescence in GaN/Si nanowires
Evidences are shown that excitons at stacking faults (SFs) in GaN nanowires (NWs) behave
like 2-dimentional particles in quantum wells. The SFs were studied in samples of …
like 2-dimentional particles in quantum wells. The SFs were studied in samples of …
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
We observe unusually narrow donor-bound exciton transitions (400 µeV) in the
photoluminescence spectra of GaN nanowire ensembles grown on Si (111) substrates at …
photoluminescence spectra of GaN nanowire ensembles grown on Si (111) substrates at …
Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous AlxOy
Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al x
O y buffers deposited at low temperature by atomic layer deposition is analyzed. We found …
O y buffers deposited at low temperature by atomic layer deposition is analyzed. We found …
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
C Hauswald, T Flissikowski, T Gotschke, R Calarco… - Physical Review B …, 2013 - APS
Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of
bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct …
bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct …
Reflectance and fast polarization dynamics of a GaN/Si nanowire ensemble
Optical phenomena in an ensemble of high-quality GaN nanowires (NWs) grown on a Si
substrate have been studied by reflectance and time-resolved luminescence. Such NWs …
substrate have been studied by reflectance and time-resolved luminescence. Such NWs …
Dynamics of free and bound excitons in GaN nanowires
C Hauswald - 2015 - edoc.hu-berlin.de
GaN-Nanodrähte können mit einer hohen strukturellen Perfektion auf verschiedenen
kristallinen und amorphen Substraten gewachsen werden. Sie bieten somit faszinierende …
kristallinen und amorphen Substraten gewachsen werden. Sie bieten somit faszinierende …
Radiative and nonradiative decay of excitons in GaN nanowires
C Hauswald, T Flissikowski, HT Grahn… - … and Devices IX, 2014 - spiedigitallibrary.org
GaN nanowires form spontaneously on a wide variety of substrates without suffering from
extended defects. However, their quasi-one-dimensional nature causes these structures to …
extended defects. However, their quasi-one-dimensional nature causes these structures to …
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
We investigate the origin of the fast recombination dynamics of bound and free excitons in
GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy …
GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy …