SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds
F García-Redondo, RP Gowers… - … on Circuits and …, 2016 - ieeexplore.ieee.org
In this work, we propose a physical memristor/resistive switching device SPICE compact
model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage …
model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage …
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
In this letter, we extensively investigate the nonlinear resistive switching characteristics of Si
3 N 4-based resistive random access memory (RRAM) devices that contain an Al 2 O 3 …
3 N 4-based resistive random access memory (RRAM) devices that contain an Al 2 O 3 …
Reservoir computing using back-end-of-line SiC-based memristors
D Guo, O Kapur, P Dai, Y Han, R Beanland… - Materials …, 2023 - pubs.rsc.org
The increasing demand for intellectual computers that can efficiently process substantial
amounts of data has resulted in the development of a wide range of nanoelectronics …
amounts of data has resulted in the development of a wide range of nanoelectronics …
Beyond the highs and lows: A perspective on the future of dielectrics research for nanoelectronic devices
High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …
Total ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
E Chatzikyriakou, K Morgan… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
From man-made satellites and interplanetary missions to fusion power plants, electronic
equipment that needs to withstand various forms of irradiation is an essential part of their …
equipment that needs to withstand various forms of irradiation is an essential part of their …
An ultra high-endurance memristor using back-end-of-line amorphous SiC
Integrating resistive memory or neuromorphic memristors into mainstream silicon technology
can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and …
can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and …
Single composite target magnetron sputter deposition of crystalline and amorphous SiC thin films
PC Akshara, G Rajaram… - Materials Research …, 2018 - iopscience.iop.org
The formation of crystalline and amorphous SiC films by single-composite target magnetron
sputter deposition process is demonstrated. In this process, graphite pieces were placed on …
sputter deposition process is demonstrated. In this process, graphite pieces were placed on …
[HTML][HTML] Back-end-of-line a-SiOxCy: H dielectrics for resistive memory
Resistive switching of W/amorphous (a)-SiO x C y: H/Cu resistive memories incorporating
solely native back-end-of-line (BEOL) materials were studied. A-SiC 1.1: H, a-SiO 0.9 C 0.7 …
solely native back-end-of-line (BEOL) materials were studied. A-SiC 1.1: H, a-SiO 0.9 C 0.7 …
On the design and analysis of reliable RRAM-CMOS hybrid circuits
F Garcia-Redondo… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Resistive switching memories (RRAMs) are one of the most promising alternatives for
nonvolatile storage and nonconventional computing systems. However, their behavior, and …
nonvolatile storage and nonconventional computing systems. However, their behavior, and …
Characterization of porous BEOL dielectrics for resistive switching
Y Fan, SW King, J Bielefeld, MK Orlowski - ECS Transactions, 2016 - iopscience.iop.org
Porous back-end dielectric materials with porosity ranging from 8% to 25% have been
characterized in terms of their resistive switching behavior. The porous dielectric is …
characterized in terms of their resistive switching behavior. The porous dielectric is …