In this paper, we report the results of consecutive irradiation and negative bias temperature
(NBT) stress experiments performed on p-channel power vertical double-diffused metal …

Hydrogen molecules in the SiO2 layer and the Si-SiO2 interface play a key role in the
reliability of Si-based devices by affecting the formation of defects. This paper focuses on the …

The effects of static and pulsed NBT stressing on threshold voltage in p-channel power
VDMOSFETs are analysed, and the results are compared in terms of the effects on device …

In this paper we provide an overview of instabilities observed in commercial power
VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The …

A method suitable for performing NBTI measurements on power p-channel VDMOS
transistors is described. A practical implementation using simple boosting circuit for …

In this paper we report on the use of a cost-effective stress and measurement setup for
investigations of NBTI in commercial p-channel power VDMOS transistors IRF9520. The …

Efficiency, reliability, and cost are the important design considerations of a vertical double
diffused MOSFET (VDMOS) because of its high-voltage applications in consumer …

Threshold voltage shifts associated with negative gate bias temperature instability in p-
channel power VDMOSFETs under the static and pulsed stress conditions are analysed in …

Vast majority of recent extensive investigations of Negative Bias Temperature Instability
(NBT) have been focused to the related phenomena in ultrathin gate dielectric layers of …

In this paper the impact of traps generated in semiconductor bulk due to High Electric Field
Stress (HEFS) or irradiation of n-channel power VDMOSFET are presented. The influence of …