The influence of the bottom TiO2 interfacial layer grown by atomic layer deposition on the
ferroelectric properties of the TiN/Hf0. 5Zr0. 5O2/TiN capacitors is systematically …

Organic field-effect transistors (OFETs) have opened up new possibilities as key elements
for skinlike intelligent systems, due to the capability of possessing multiple functionalities …

Ti layer inserted in the TiN gate electrode effectively scavenges the oxygen in the low‐k
interfacial SiO2 of the metal–ferroelectric–insulator–semiconductor (MFIS) capacitors with …

Thin-film transistor (TFT) is a essential device for future electronics driving the next level of
digital transformation. The development of metal-oxide-semiconductor (MOS) TFTs is …

Modified poly (vinyl chloride)(PVC) films have been synthesized with a simple superficial
deposition by using solvent tetrahydrofuran (THF). These modified films were prepared by a …

In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V 2 O
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …

Low leakage current and high breakdown voltage are critically important to design high
performance Schottky barrier diodes. In this work, a low leakage current was reported by …

We present a novel low-temperature (30° C) atomic layer deposition process for hafnium
oxide and apply the layers as gate dielectric to fabricate devices out of the thermally …

In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …

The p-type surface conductivity of hydrogen-terminated diamond (H-diamond) provides a
viable approach toward diamond-based wide-bandgap metal-oxide-semiconductor field …