Essential characteristics of memristors for neuromorphic computing
The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …
applied voltage or current. Memristive devices are thus capable of storing and computing …
Emerging phase change memory devices using non-oxide semiconducting glasses
S Agarwal, P Lohia, DK Dwivedi - Journal of Non-Crystalline Solids, 2022 - Elsevier
In the new computing world, phase-change memory (PCM) has recently evolved as a non-
volatile key-enabling technology that has been used as memory storage. PCM has also …
volatile key-enabling technology that has been used as memory storage. PCM has also …
Designing conductive‐bridge phase‐change memory to enable ultralow programming power
Z Yang, B Li, JJ Wang, XD Wang, M Xu… - Advanced …, 2022 - Wiley Online Library
Phase‐change material (PCM) devices are one of the most mature nonvolatile memories.
However, their high power consumption remains a bottleneck problem limiting the data …
However, their high power consumption remains a bottleneck problem limiting the data …
Unveiling the effect of superlattice interfaces and intermixing on phase change memory performance
Superlattice (SL) phase change materials have shown promise to reduce the switching
current and resistance drift of phase change memory (PCM). However, the effects of internal …
current and resistance drift of phase change memory (PCM). However, the effects of internal …
Three resistance states achieved by nanocrystalline decomposition in Ge‐Ga‐Sb compound for multilevel phase change memory
L Zhang, X Mai, R Gu, L Liu, C Xiong… - Advanced Electronic …, 2021 - Wiley Online Library
Abstract Phase‐change memory (PCM), using the fast and reversible transition between
crystal and glass to store binary data, is a promising candidate for next‐generation …
crystal and glass to store binary data, is a promising candidate for next‐generation …
Exploring Phase‐Change Memory: From Material Systems to Device Physics
Y Ren, R Sun, SHY Chen, C Du… - physica status solidi …, 2021 - Wiley Online Library
To deal with the growing demand for data storage and processing, phase‐change memory
(PCM) provides one of the most promising candidates for next‐generation nonvolatile data …
(PCM) provides one of the most promising candidates for next‐generation nonvolatile data …
Bidirectional selector utilizing hybrid diodes for PCRAM applications
Three-dimensional crossbar technology has been of great significance for realizing high
density and multiple terabytes of data storage in memory devices. However, to further scale …
density and multiple terabytes of data storage in memory devices. However, to further scale …
Design space exploration of ferroelectric tunnel junction toward crossbar memories
We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel
junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to …
junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to …
Merged logic and memory fabrics for accelerating machine learning workloads
Designing hardware accelerators for machine learning (ML) applications is a well-
researched problem. This article presents a tutorial regarding new computing architectures …
researched problem. This article presents a tutorial regarding new computing architectures …
Thermal Confinement by Monolayer MoS2 for Reduced RESET Current in Phase Change Memory Pillar Cells
S Muneer, MAH Chowdhury… - ACS Applied …, 2024 - ACS Publications
Phase change memory (PCM) is one of the most promising nonvolatile memory
technologies for high-density, high-endurance, fast-switching, and multilevel data storage …
technologies for high-density, high-endurance, fast-switching, and multilevel data storage …