Essential characteristics of memristors for neuromorphic computing

W Chen, L Song, S Wang, Z Zhang… - Advanced Electronic …, 2023 - Wiley Online Library
The memristor is a resistive switch where its resistive state is programable based on the
applied voltage or current. Memristive devices are thus capable of storing and computing …

Emerging phase change memory devices using non-oxide semiconducting glasses

S Agarwal, P Lohia, DK Dwivedi - Journal of Non-Crystalline Solids, 2022 - Elsevier
In the new computing world, phase-change memory (PCM) has recently evolved as a non-
volatile key-enabling technology that has been used as memory storage. PCM has also …

Designing conductive‐bridge phase‐change memory to enable ultralow programming power

Z Yang, B Li, JJ Wang, XD Wang, M Xu… - Advanced …, 2022 - Wiley Online Library
Phase‐change material (PCM) devices are one of the most mature nonvolatile memories.
However, their high power consumption remains a bottleneck problem limiting the data …

Unveiling the effect of superlattice interfaces and intermixing on phase change memory performance

AI Khan, X Wu, C Perez, B Won, K Kim, P Ramesh… - Nano Letters, 2022 - ACS Publications
Superlattice (SL) phase change materials have shown promise to reduce the switching
current and resistance drift of phase change memory (PCM). However, the effects of internal …

Three resistance states achieved by nanocrystalline decomposition in Ge‐Ga‐Sb compound for multilevel phase change memory

L Zhang, X Mai, R Gu, L Liu, C Xiong… - Advanced Electronic …, 2021 - Wiley Online Library
Abstract Phase‐change memory (PCM), using the fast and reversible transition between
crystal and glass to store binary data, is a promising candidate for next‐generation …

Exploring Phase‐Change Memory: From Material Systems to Device Physics

Y Ren, R Sun, SHY Chen, C Du… - physica status solidi …, 2021 - Wiley Online Library
To deal with the growing demand for data storage and processing, phase‐change memory
(PCM) provides one of the most promising candidates for next‐generation nonvolatile data …

Bidirectional selector utilizing hybrid diodes for PCRAM applications

Y Shuang, S Hatayama, J An, J Hong, D Ando… - Scientific Reports, 2019 - nature.com
Three-dimensional crossbar technology has been of great significance for realizing high
density and multiple terabytes of data storage in memory devices. However, to further scale …

Design space exploration of ferroelectric tunnel junction toward crossbar memories

N Jao, Y Xiao, AK Saha, SK Gupta… - IEEE Journal on …, 2021 - ieeexplore.ieee.org
We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel
junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to …

Merged logic and memory fabrics for accelerating machine learning workloads

B Crafton, S Spetalnick, Y Fang… - IEEE Design & …, 2020 - ieeexplore.ieee.org
Designing hardware accelerators for machine learning (ML) applications is a well-
researched problem. This article presents a tutorial regarding new computing architectures …

Thermal Confinement by Monolayer MoS2 for Reduced RESET Current in Phase Change Memory Pillar Cells

S Muneer, MAH Chowdhury… - ACS Applied …, 2024 - ACS Publications
Phase change memory (PCM) is one of the most promising nonvolatile memory
technologies for high-density, high-endurance, fast-switching, and multilevel data storage …