The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

The limited memory retention for a ferroelectric field-effect transistor has prevented the
commercialization of its nonvolatile memory potential using the commercially available …

We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …

We fabricate, characterize, and establish the critical design criteria of Hf 0.5 Zr 0.5 O 2 (HZO)-
based ferroelectric field effect transistor (FeFET) for nonvolatile memory application. We …

Ferroelectricity in HfO 2-based materials, especially Hf 0.5 Zr 0.5 O 2 (HZO), is today one of
the most attractive topics because of its wide range of applications in ferroelectric random …

Deep learning has become ubiquitous, touching daily lives across the globe. Today,
traditional computer architectures are stressed to their limits in efficiently executing the …