Perovskites exhibit a wide range of remarkable material properties that have the potential to
advance various scientific fields. These properties originate in their unique structure and …

Provided that electron transition ascribed to overlapping electron dominates the mechanism
of contact electrification of triboelectric nanogenerators (TENGs), the electron transfer …

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth
understanding of the physical mechanism and the material issues, particularly by directly …

The soaring global demand for flexible, wearable and transparent devices has created an
urgent need for new fabrication technologies that are both cost-competitive and eco-friendly …

In this study, direct experimental materials science evidence of the important theoretical
prediction for resistive random access memory (RRAM) technologies that a critical amount of …

Here, correlations between polymer structure and charge transport in solution‐processed
indium oxide, In2O3: polymer blend flexible thin film transistors (TFTs) are investigated using …

A synaptic transistor emulating the biological synaptic motion is demonstrated using the
memcapacitance characteristics in a Pt/HfOx/n-indium-gallium-zinc-oxide (IGZO) …

Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with carbon, show
non-volatile current–voltage characteristics, which are both universal and repeatable. We …

We report on the fabrication and electrical characterization of MIM capacitors using barrier
type anodic alumina dielectric between Al electrodes. Its fabrication is based on CMOS …

Polycrystalline Cu films with nanoscale annealing twins are subjected to in situ Kr++ ion
irradiation at room temperature inside a transmission electron microscope up to a dose of 1 …