This article presents a review on the current status, challenges, and potential future
development opportunities for HgCdTe infrared materials and detector technology. A brief …

Narrow‐bandgap 2D materials and semimetals, for example, graphene, black phosphorus
(BP), tellurium (Te), and some novel transition metal dichalcogenides (TMDs), have been …

For further uptake in the solar cell industry, n-ZnO/p-Si single heterojunction solar cell has
attracted much attention of the research community in recent years. This paper reports the …

Abstract 2D materials, of which the carrier type and concentration are easily tuned, show
tremendous superiority in electronic and optoelectronic applications. However, the …

The authors report the dependence of the quantum efficiency on device thickness of type-II
In As∕ Ga Sb superlattice photodetectors with a cutoff wavelength around 12 μ m⁠. The …

Resistance-voltage curves of n-on-p Hg 1− х Cd x Te long-wavelength infrared photodiodes
forming 128-element array are measured in the temperature range of 40–150 K …

This paper reports the results of modeling of electrical characteristics of midinfrared type II In
As∕ Ga Sb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with …

An HgCdTe long-wavelength infrared focal plane array photodetector is proposed by
modulating light distributions based on the photonic crystal. It is shown that a promising …

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared
detectors have been studied using a recently suggested method for modelling of illuminated …

Dark dynamic impedance versus applied bias voltage characteristics of HgCdTe n+–p
junctions has been modelled here using a recently proposed [Infrared Phys. Technol. 43 …