A composite nanostructure based on quasi-one-dimensional InP nanowires with an InAsP
nanoinsert, grown on a Si (111) substrate by the method of molecular-beam epitaxy, and …

We propose a new insight into the mechanism of low-temperature Au-assisted growth of
InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was …

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and
TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the …

In this work, we study the energy levels of electrons and holes of InAs quantum dots inside
InP/InAs 0.25 P 0.75/InP semiconductor nanowires. Taking into account the nonparabolicity …

The features of photoluminescence (PL) of hybrid nanostructures based on InP/InAsP/InP
nanowires array with deposited colloidal CdSe/ZnS-trioctylphosphine oxide quantum dots at …

We present the results on experimental studies of the directional radiation from GaAs
quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon …

Subject of study. The dependence of the photoluminescence of a flexible film structure,
which is an array of InP/InAsP/InP nanowires incorporated into a polymerized …

III-V nanowires (NWs) are a promising technology for piezotronic and nanooptoelctronic
applications. In this work, we investigate the processes of fabricating a structure with InP NW …

Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building
blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs …

Abstract Arrays of Be-doped (Al, Ga) As core/shell nanowires are synthesized by molecular-
beam epitaxy on a Si-doped n-GaAs (111) B substrate. A study of the photovoltaic properties …