Short-wavelength-infrared (SWIR; 1.4–3.0 µ m) photodetection is important for various
applications. Inducing a low-cost silicon-compatible material, such as germanium, to detect …

Germanium has received increased research interest for use in next-generation CMOS
technology as its high carrier mobilities allow for enhanced device performance without …

UV nanosecond pulsed laser annealing (UV-NLA) is demonstrating clear benefits in the
emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly …

Ge 1-x Sn x alloys have attracted considerable attention for their promising electrical and
optical properties. One of the main challenges for their successful implementation in devices …

Diffusion profiles of arsenic and antimony in undoped and carbon doped germanium (Ge),
respectively, were analysed by means of scanning spreading resistance microscopy …

Defect levels induced by defect-complexes in Ge play important roles in device fabrication,
characterization, and processing. However, only a few defect levels induced by defect …

By employing a 355-nm nanosecond (ns) ultraviolet (UV) laser annealing, the impact of
fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in …

UV nanosecond pulsed laser annealing (UV-NLA) is demonstrating clear benefits in the
emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly …

Incorporation of P in germanium was studied by using PF+ molecular implantation in a
range from room temperature to 400° C. The presence of F acted as a barrier for P in …

This chapter presents a review of the most relevant experimental results demonstrating the
ability of nanosecond laser annealing to achieve dopant activation well above the solid …