Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs
K Romanjek, F Andrieu, T Ernst… - IEEE Electron Device …, 2004 - ieeexplore.ieee.org
The feasibility of split capacitance-voltage (CV) measurements in sub-0.1 μm Si MOSFETs is
demonstrated. Based on the split CV measurements, an improved methodology to extract …
demonstrated. Based on the split CV measurements, an improved methodology to extract …
Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length
We discuss selected aspects of the physics of electronic transport in nMOSFETs at the 10-
nm scale: Long-range Coulomb interactions, which may degrade performance and even …
nm scale: Long-range Coulomb interactions, which may degrade performance and even …
Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition
DM Zhernokletov, MA Negara, RD Long… - … applied materials & …, 2015 - ACS Publications
We correlate interfacial defect state densities with the chemical composition of the
Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron …
Al2O3/GaN interface in metal-oxide-semiconductor (MOS) structures using synchrotron …
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
The effective electron mobility in long-channel silicon-on-insulator junctionless multigate
metal-oxide-semiconductor transistors is experimentally studied. It is found that the mobility …
metal-oxide-semiconductor transistors is experimentally studied. It is found that the mobility …
Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities
T Rudenko, V Kilchytska, N Collaert… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
This paper presents an extensive experimental study of the effective mobility in the long-
channel undoped triple-gate FinFETs. The mobility behavior in FinFETs is studied as …
channel undoped triple-gate FinFETs. The mobility behavior in FinFETs is studied as …
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric
F Lime, K Oshima, M Casse, G Ghibaudo… - Solid-State …, 2003 - Elsevier
Advanced channel N and P MOSFETs with HfO2 gate dielectric and metal gate have been
fabricated and exhibit high performance. The effective mobility has been characterized at …
fabricated and exhibit high performance. The effective mobility has been characterized at …
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
T Rudenko, V Kilchytska, S Burignat, JP Raskin… - Solid-State …, 2010 - Elsevier
This paper presents a detailed experimental study of the electrical characteristics of long-
channel ultra-thin body SOI MOSFETs with standard and thin buried oxides and high-k gate …
channel ultra-thin body SOI MOSFETs with standard and thin buried oxides and high-k gate …
Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
We report a new analysis of electron mobility in HfO 2/TiN gate metal-oxide-semiconductor
field effect transistors (MOSFETs) by investigating the influence of HfO 2 thickness (1.6–3 …
field effect transistors (MOSFETs) by investigating the influence of HfO 2 thickness (1.6–3 …
Scaling MOSFETs to the limit: a physicists's perspective
MV Fischetti - Journal of Computational Electronics, 2003 - Springer
To circumvent its present practical limits—mainly gate leakage and poor performance—
'MOSFET scaling'has taken a different meaning: Not simply shrinking the device, but …
'MOSFET scaling'has taken a different meaning: Not simply shrinking the device, but …
Characterization of the effective mobility by split C (V) technique in sub 0.1 μm Si and SiGe PMOSFETs
K Romanjek, F Andrieu, T Ernst, G Ghibaudo - Solid-state electronics, 2005 - Elsevier
The feasibility of split C–V measurements is successfully demonstrated on sub-0.1 μm Si
MOSFETs. A novel improved methodology to extract accurately the effective channel length …
MOSFETs. A novel improved methodology to extract accurately the effective channel length …