Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
A Physical Model of the Temperature Dependence of the Current Through Stacks
L Vandelli, A Padovani, L Larcher… - … on Electron Devices, 2011 - ieeexplore.ieee.org
In this paper, we investigate the characteristics of the defects responsible for the leakage
current in the SiO 2 and SiO 2/HfO 2 gate dielectric stacks in a wide temperature range (6 K …
current in the SiO 2 and SiO 2/HfO 2 gate dielectric stacks in a wide temperature range (6 K …
Electric field cycling behavior of ferroelectric hafnium oxide
HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure
and low permittivity. They just recently started attracting attention of theoretical groups in the …
and low permittivity. They just recently started attracting attention of theoretical groups in the …
[图书][B] Sintering: mechanisms of convention nanodensification and field assisted processes
R Castro, K Van Benthem - 2012 - books.google.com
Sintering process studies have re-emerged strongly in the past decade due to extensive
discussions about the stabilization of nanoparticles and nanostructures, and the …
discussions about the stabilization of nanoparticles and nanostructures, and the …
Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
Ferroelectric hafnium oxide (HfO 2) has been extensively studied for over a decade,
especially as a CMOS-compatible material in emerging memory applications. Most recently …
especially as a CMOS-compatible material in emerging memory applications. Most recently …
Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2
Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional
memory technologies due to their scalability and energy efficiency. However, there are still …
memory technologies due to their scalability and energy efficiency. However, there are still …
Towards interdependencies of aging mechanisms
With technology in deep nano scale, the susceptibility of transistors to various aging
mechanisms such as Negative/Positive Bias Temperature Instability (NBTI/PBTI) and Hot …
mechanisms such as Negative/Positive Bias Temperature Instability (NBTI/PBTI) and Hot …
Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics
L Vandelli, A Padovani, L Larcher… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
We present a quantitative physical model describing degradation of poly-crystalline HfO 2
dielectrics subjected to electrical stress culminating in the dielectric breakdown (BD). The …
dielectrics subjected to electrical stress culminating in the dielectric breakdown (BD). The …
Accurate model for time-dependent dielectric breakdown of high-k metal gate stacks
T Nigam, A Kerber, P Peumans - 2009 IEEE International …, 2009 - ieeexplore.ieee.org
Time-dependent dielectric breakdown (TDDB) in high-k (HK) dielectric stacks is
characterized by short breakdown times and shallow Weibull slopes. In this work, these …
characterized by short breakdown times and shallow Weibull slopes. In this work, these …
Positive and negative oxygen vacancies in amorphous silica
We modeled all stable positive and negative charge states of oxygen vacancies originating
from the neutral O3ŁSi= SiŁO3 defect in amorphous SiO2 (a-SiO2) using an embedded …
from the neutral O3ŁSi= SiŁO3 defect in amorphous SiO2 (a-SiO2) using an embedded …