The spin-dependent interactions in diluted magnetic semiconductors are reviewed. The non-
trivial dependence of the pd and the dd exchange interactions, which rule the magnetic …

A magnetic ''spin filter''tunnel barrier, sandwiched between a nonmagnetic metal and a
magnetic metal, is used to create a magnetoresistive tunnel device, somewhat analogous to …

Publisher Summary This chapter discusses low-dimensional structures of II–VI diluted
magnetic semiconductors (DMS) with manganese and describes the carrier concentration …

To understand the importance of the band gap to the magnetic ordering in magnetic
semiconductors, we have studied the effect of particle size on the ferromagnetic Curie …

EuS nanoparticles were synthesized by solution-phase thermolysis of the diethylammonium
salt of the anionic europium dithiocarbamate complex,[Eu (S2CNEt2) 4]−. Oleylamine and …

The classical Heisenberg model is applied in a Monte Carlo study to investigate the distance
dependence of the indirect nearest-neighbor (NN) exchange and next-nearest-neighbor …

The interlayer coupling between (Ga, Mn) As ferromagnetic layers in all-semiconductor
superlattices is studied theoretically within a tight-binding model, which takes into account …

We propose a spin-valve device consisting of a nonmagnetic semiconductor quantum well,
sandwiched between ferromagnetic semiconductor layers that act as barriers. The total …

Multilayers of strained metamagnetic EuSe intercalated with nonmagnetic PbSe 1-x Te x
were grown by molecular beam epitaxy under conditions optimized by electron diffraction …

Molecular beam epitaxy of IVeVI semiconductors has long been used both for fabrication of
low-dimensional structures [1e4] and infrared optoelectronic devices [5e11]. The …