A milliwatt-level 70–110 GHz frequency quadrupler with> 30 dBc harmonic rejection
This article presents a two-channel 70–110-GHz frequency quadrupler in the GF8HP 0.12-
SiGe BiCMOS process. The frequency multiplication is based on cascaded frequency …
SiGe BiCMOS process. The frequency multiplication is based on cascaded frequency …
A 150-GHz transmitter with 12-dBm peak output power using 130-nm SiGe: C BiCMOS process
P Zhou, J Chen, P Yan, J Yu, H Li… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article presents a compact 150-GHz transmitter with 12-dBm Psat and 17-dB
conversion gain. This D-band transmitter is composed of a frequency doubler, a micromixer …
conversion gain. This D-band transmitter is composed of a frequency doubler, a micromixer …
High-Power V-Band CMOS Frequency Tripler With Efficient Matching Networks
A V-band CMOS frequency tripler with efficient input-output, and interstage matching
networks is proposed to improve the output power and conversion efficiency. The interstage …
networks is proposed to improve the output power and conversion efficiency. The interstage …
A broadband power amplifier in 130-nm SiGe BiCMOS technology
This letter describes an ultrabroadband power amplifier (PA) in a 130-nm SiGe: C BiCMOS
technology. To achieve this broadband while keeping a compact chip size, an on-chip …
technology. To achieve this broadband while keeping a compact chip size, an on-chip …
E-Band Frequency Sextupler With >35 dB Harmonics Rejection Over 20 GHz Bandwidth in 55 nm BiCMOS
MM Pirbazari, A Mazzanti - IEEE Journal of Solid-State Circuits, 2022 - ieeexplore.ieee.org
A frequency multiplier by six (sextupler) for local oscillation (LO) generation in-band is
presented. It comprises a tripler, a doubler, and an output buffer. A detailed analysis is …
presented. It comprises a tripler, a doubler, and an output buffer. A detailed analysis is …
An E-band SiGe high efficiency, high harmonic suppression amplifier multiplier chain with wide temperature operating range
P Zhou, J Chen, P Yan, J Yu, D Hou… - … on Circuits and …, 2021 - ieeexplore.ieee.org
This paper presents a monolithically integrated E-band amplifier multiplier chain (AMC)
developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1 …
developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of a 25 GHz 1 …
A Compact W-Band Frequency Tripler Using Single-Balanced Topology
JA Qayyum, JD Albrecht… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
This letter presents a compact W-band frequency tripler implemented in a 0.13-μm SiGe
BiCMOS technology. It uses a single-balanced differential pair core overdriven as Class A …
BiCMOS technology. It uses a single-balanced differential pair core overdriven as Class A …
75–86-GHz signal generation using a phase-controlled quadrature-push quadrupler driven by a QVCO or a tunable polyphase filter
This article demonstrates a-band local-oscillator generation technique in 120-nm SiGe
BiCMOS technology with high output power and high efficiency. The circuit employs a …
BiCMOS technology with high output power and high efficiency. The circuit employs a …
A 273.5–312-GHz signal source with 2.3 dBm peak output power in a 130-nm SiGe BiCMOS process
This article presents a 300-GHz signal source that consists of a 75-GHz voltage controlled
oscillator (VCO), a static frequency divider-by-two circuit, a 150-GHz doubler, a 150-GHz …
oscillator (VCO), a static frequency divider-by-two circuit, a 150-GHz doubler, a 150-GHz …
An E-Band transformer-based× 8 frequency multiplier with enhanced harmonic rejection
We present an efficient method of enhancing the harmonic rejection ratio (HRR) of a
millimeter-wave frequency multiplier (FM) by utilizing optimal capacitive loads with minimal …
millimeter-wave frequency multiplier (FM) by utilizing optimal capacitive loads with minimal …