Reuse and mechanochemical processing of ore dressing tailings used for extracting Pb and Zn
VI Golik, RV Klyuev, NV Martyushev, VV Kondratiev… - Materials, 2023 - mdpi.com
The increasing accumulation of rock waste obtained due to ore processing and its
environmental impacts, such as acid mine drainage and elevated concentrations of heavy …
environmental impacts, such as acid mine drainage and elevated concentrations of heavy …
Mist CVD Technology for Gallium Oxide Deposition: A Review
Mist chemical vapor deposition (mist CVD) technology originated from early metal organic
chemical vapor deposition (MOCVD) techniques. By mist CVD, High-quality oxide films are …
chemical vapor deposition (MOCVD) techniques. By mist CVD, High-quality oxide films are …
Role of Native Defects in Fe-Doped β-Ga2O3
H Zeng, M Wu, H Gao, Y Wang, H Xu, M Cheng, Q Lin - Materials, 2023 - mdpi.com
Iron impurities are believed to act as deep acceptors that can compensate for the n-type
conductivity in as-grown Ga2O3, but several scientific issues, such as the site occupation of …
conductivity in as-grown Ga2O3, but several scientific issues, such as the site occupation of …
Growth of Low-defect Si-Doped Ga2O3 Film on Fluorine-doped Tin Oxide Substrate for Self-powered and High-performance Ultraviolet Photodetector
In this study, an efficient ultraviolet photodetector (UV PD) is prepared based on ap–n
junction that is metal-electrode-free and with a vertical configuration. Briefly, n-type Si-doped …
junction that is metal-electrode-free and with a vertical configuration. Briefly, n-type Si-doped …
[HTML][HTML] Roles of Impurity Levels in 3d Transition Metal-Doped Two-Dimensional Ga2O3
H Zeng, C Ma, X Li, X Fu, H Gao, M Wu - Materials, 2024 - pmc.ncbi.nlm.nih.gov
Doping engineering is crucial for both fundamental science and emerging applications.
While transition metal (TM) dopants exhibit considerable advantages in the tuning of …
While transition metal (TM) dopants exhibit considerable advantages in the tuning of …
[HTML][HTML] Exploring the effective P-type dopants in two-dimensional Ga2O3 by first-principles calculations
H Zeng, C Ma, M Wu - AIP Advances, 2024 - pubs.aip.org
Exploring effective p-type doping in Ga 2 O 3 is crucial for both fundamental science and
emerging applications. Recently, N and Zn elements have been shown to exhibit …
emerging applications. Recently, N and Zn elements have been shown to exhibit …
First‐Principles Study on the Effects of Different Valence Hi and VO on the Mobility, Conductivity, and Carrier Lifetime of β‐Ga2O3: Mo5+/6+
X Liu, S Wen, D Chen, W Wang, X Feng… - physica status solidi …, 2025 - Wiley Online Library
The poor conductivity of β‐Ga2O3 limits its application in optoelectronic devices. Currently,
there have been advancements in investigating the impact of Mo doping on the photoelectric …
there have been advancements in investigating the impact of Mo doping on the photoelectric …
Effects of NiO doping and trench wall tilt on Ga2O3 PiN diodes performance
GH Lee, TH Lee, JS Choi, YH Cho, YJ Kim… - Microelectronics …, 2024 - Elsevier
Abstract Gallium Oxide (Ga 2 O 3) is a promising material for next-generation power
semiconductors due to its wide bandgap (∼ 4.9 eV), high Baliga's figure of merit …
semiconductors due to its wide bandgap (∼ 4.9 eV), high Baliga's figure of merit …
Synthesis of CdO/por-CdS/CdS Heterostructure with Doughnut-Like Crystallites
The CdO/por-CdS/CdS heterostructures were formed by a three-step electrochemical
treatment method, which included cathodic etching, anodic deposition, and simple chemical …
treatment method, which included cathodic etching, anodic deposition, and simple chemical …
Charge Transition Levels and Stability of Ni-and Ir-Doped Β-Ga2o3: A Comprehensive Hybrid Functional Study
In this study, the optimized hybrid functional HSE (0.26, 0.0) is employed to investigate the
incorporation of nickel (Ni) and iridium (Ir) dopants in β-Ga2O3. The formation energies and …
incorporation of nickel (Ni) and iridium (Ir) dopants in β-Ga2O3. The formation energies and …