Electronics employed in modern safety-critical systems require severe qualification during
the manufacturing process and in the field, to prevent fault effects from manifesting …

The paper addresses some of the opportunities and challenges related to test and reliability
of three major emerging computing paradigms; ie, Quantum Computing, Computing engines …

Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor
(FinFET) static random access memories (SRAMs). Detection of these faults, such as …

STT-MRAM has long been a promising non-volatile memory solution for the embedded
application space owing to its attractive characteristics such as non-volatility, low leakage …

STT-MRAM is one of the most promising emerging non-volatile memory technologies. As its
mass production and deployment in industry is around the corner, high-quality yet cost …

The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque
magnetic random access memories (STT-MRAMs) is growing very fast. The performance of …

The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production
requires high-quality dedicated test solutions, for which understanding and modeling of …

Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) are on their way to commercialization.
However, obtaining high-quality test and diagnosis solutions for STT-MRAMs is challenging …

The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate
magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus …

The Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is on its way to
commercialization. However, the development of high-quality test solutions for STT-MRAMs …