[HTML][HTML] Recent progress in heterogeneous III-V-on-silicon photonic integration

D Liang, JE Bowers - Light: Advanced Manufacturing, 2021 - light-am.com
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …

Mid-infrared integrated photonics on silicon: a perspective

H Lin, Z Luo, T Gu, LC Kimerling, K Wada… - …, 2017 - degruyter.com
The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …

Silicon photonics-based high-energy passively Q-switched laser

N Singh, J Lorenzen, M Sinobad, K Wang, AC Liapis… - Nature …, 2024 - nature.com
Chip-scale, high-energy optical pulse generation is becoming increasingly important as
integrated optics expands into space and medical applications where miniaturization is …

III–V-on-silicon photonic integrated circuits for spectroscopic sensing in the 2–4 μm wavelength range

R Wang, A Vasiliev, M Muneeb, A Malik, S Sprengel… - Sensors, 2017 - mdpi.com
The availability of silicon photonic integrated circuits (ICs) in the 2–4 μm wavelength range
enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we …

Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon

A Malik, J Guo, MA Tran, G Kurczveil, D Liang… - Photonics …, 2020 - opg.optica.org
Heterogeneously integrated lasers in the O-band are a key component in realizing low-
power optical interconnects for data centers and high-performance computing. Quantum-dot …

Widely tunable 2.3 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

R Wang, S Sprengel, A Vasiliev, G Boehm… - Photonics …, 2018 - opg.optica.org
Heterogeneously integrating III-V materials on silicon photonic integrated circuits has
emerged as a promising approach to make advanced laser sources for optical …

Widely Tunable (2.47–2.64 µm) Hybrid Laser Based on GaSb/GaInAsSb Quantum‐Wells and a Low‐Loss Si3N4 Photonic Integrated Circuit

SP Ojanen, J Viheriälä, N Zia… - Laser & Photonics …, 2023 - Wiley Online Library
Photonic integrated circuits fabricated using a Si3N4 waveguide platform exhibit low losses
in a wide wavelength region extending from visible to beyond 2 µm. This feature is exploited …

Low noise, tunable silicon photonic lasers

A Malik, C Xiang, L Chang, W Jin, J Guo… - Applied Physics …, 2021 - pubs.aip.org
Silicon photonics is a truly disruptive technology that has grown tremendously in the past
two decades. It has now become a recognized leader in the next generation of consumer …

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range

E Soltanian, G Muliuk, S Uvin, D Wang, G Lepage… - Optics …, 2022 - opg.optica.org
In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser
structure with more than a 110 nm wavelength tuning range realized using micro-transfer …

Hybrid silicon photonics DBR laser based on flip-chip integration of GaSb amplifiers and µm-scale SOI waveguides

N Zia, H Tuorila, J Viheriälä, SP Ojanen, E Koivusalo… - Optics …, 2022 - opg.optica.org
The development of integrated photonics experiences an unprecedented growth dynamic,
owing to accelerated penetration to new applications. This leads to new requirements in …