Review of silicon carbide power devices and their applications
Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …
decades, and there are many devices commercially available now. Owing to the intrinsic …
Current status and perspectives of ultrahigh-voltage SiC power devices
T Kimoto, Y Yonezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination
We report on homoepitaxial GaN pn junction diodes with a negative beveled-mesa
termination. The electric field distribution in a beveled-mesa was investigated using TCAD …
termination. The electric field distribution in a beveled-mesa was investigated using TCAD …
Carrier lifetime and breakdown phenomena in SiC power device material
T Kimoto, H Niwa, T Okuda, E Saito… - Journal of Physics D …, 2018 - iopscience.iop.org
Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …
Accurate analytical modeling for switching energy of PiN diodes reverse recovery
PiN diodes are known to significantly contribute to switching energy as a result of reverse-
recovery charge during turn-off. At high switching rates, the overlap between the high peak …
recovery charge during turn-off. At high switching rates, the overlap between the high peak …
A multiple-ring-modulated JTE technique for 4H-SiC power device with improved JTE-dose window
X Deng, L Li, J Wu, C Li, W Chen, J Li… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, a multiple-ring-modulated junction termination extension (MRM-JTE)
technology for large-area silicon carbide PiN rectifier rated at 4500 V is proposed and …
technology for large-area silicon carbide PiN rectifier rated at 4500 V is proposed and …
Highly enhanced inductive current sustaining capability and avalanche ruggedness in GaN pin diodes with shallow bevel termination
KW Nie, WZ Xu, FF Ren, D Zhou… - IEEE Electron …, 2020 - ieeexplore.ieee.org
In this work, small-angle beveled-mesa termination technique was developed in GaN pin
power diodes for high avalanche performances. With effective alleviation of electric field …
power diodes for high avalanche performances. With effective alleviation of electric field …
High-permittivity dielectric edge termination for vertical high voltage devices
A novel edge-termination concept using extreme permittivity dielectrics is proposed to
effectively manage electric fields in vertical power-devices. This method is expected to be …
effectively manage electric fields in vertical power-devices. This method is expected to be …
A review of the etched terminal structure of a 4H-SiC PiN diode
H Zhou, J Yan, J Li, H Ge, T Zhu, B Zhang… - Journal of …, 2023 - iopscience.iop.org
The comparison of domestic and foreign studies has been utilized to extensively employ
junction termination extension (JTE) structures for power devices. However, achieving a …
junction termination extension (JTE) structures for power devices. However, achieving a …