Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

Efficiency roll-off is a major issue for most types of light-emitting diodes (LEDs), and its
origins remain controversial. Here we present investigations of the efficiency roll-off in …

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal
quantum efficiency with increasing injection current. This droop phenomenon is currently the …

Over the past decade, advances in LEDs have enabled the potential for wide-scale
replacement of traditional lighting with solid-state light sources. If LED performance targets …

Crystallographic dislocation has been well-known to be one of the major causes responsible
for the unfavorable carrier dynamics in conventional semiconductor devices. Halide …

We report on the optical properties of the InGaN-based red LED grown on a c-plane
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …

In this paper, we report on the latest advancements in improving AlGaInN-based visible-light-
emitting-diode (LED) efficiency in epitaxy, chip, and package designs. We investigate the …

Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and
polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor …

Multiple quantum well (MQW) InGaN light emitting diodes with and without electron blocking
layers, with relatively small and large barriers, with and without p-type doping in the MQW …