Ultra-scaled transistors are of interest in the development of next-generation electronic
devices,–. Although atomically thin molybdenum disulfide (MoS2) transistors have been …

We describe a 7-nm predictive process design kit (PDK) called the ASAP7 PDK, developed
in collaboration with ARM Ltd. for academic use. The PDK is realistic, based on current …

This paper presents the 15 nm FinFET-based Open Cell Library (OCL) and describes the
challenges in the methodology while designing a standard cell library for such advanced …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Approximate computing is a new paradigm for designing energy-efficient integrated circuits
at the nanoscale. In this paper, we propose efficient imprecise 4: 2 and 5: 2 compressors by …

The Moore's Law era enjoyed a long run of lithographically-enabled pitch shrinking that
directly reduced the cost per (von Neumann) function, as well as system power and …

Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building
energy-efficient digital systems at highly scaled technology nodes. However, carbon …

Integrated optical circuits with nanophotonic devices have attracted significant attention due
to their low power dissipation and light-speed operation. With light interference and …

Future applications such as anomaly detection in a network and autonomous driving require
extremely low, submicrosecond latency processing in pattern classification. Towards the …

This paper investigates crosstalk (XT) analysis of emerging multi-layer graphene
nanoribbons (MLGNR) as chip interconnect material with different types of repeater …