AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
This paper presents a comprehensive review of AlGaN/GaN high electron mobility transistor
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …
failure physics and reliability, focusing on mechanisms affecting the gate-drain edge, where …
Reliability issues of gallium nitride high electron mobility transistors
In the present paper we review the most recent degradation modes and mechanisms
recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron …
recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron …
Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors
M Faqir, G Verzellesi, A Chini, F Fantini… - … on Device and …, 2008 - ieeexplore.ieee.org
The physical mechanisms underlying RF current-collapse effects in AlGaN-GaN high-
electron-mobility transistors are investigated by means of measurements and numerical …
electron-mobility transistors are investigated by means of measurements and numerical …
Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing
E Zanoni, F Danesin, M Meneghini… - IEEE Electron …, 2009 - ieeexplore.ieee.org
Reverse-bias testing in AlGaN/GaN HEMTs at high (negative) gate voltage is found to
induce a catastrophic increase in gate leakage current IG, with only a slight degradation of …
induce a catastrophic increase in gate leakage current IG, with only a slight degradation of …
Lifetesting GaN HEMTs with multiple degradation mechanisms
BM Paine, SR Polmanter, VT Ng… - … on Device and …, 2015 - ieeexplore.ieee.org
A technique is described, to efficiently evaluate the reliability of an RF semiconductor device
when several different mechanisms contribute simultaneously to its wearout. This is of …
when several different mechanisms contribute simultaneously to its wearout. This is of …
Reliability assessment of AlGaN/GaN HEMTs on the SiC substrate under the RF stress
This article reports a reliability study on AlGaN/GaN high-electron-mobility transistors under
the RF stress. It shows a stabilization of the gate contact after the aging test. However, the …
the RF stress. It shows a stabilization of the gate contact after the aging test. However, the …
Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications
S Lee, R Vetury, JD Brown, SR Gibb… - 2008 IEEE …, 2008 - ieeexplore.ieee.org
We present wearout reliability assessment of GaN HEMTs fabricated on SiC. Based on 3
temperature 48 V dc stress tests and using a failure criterion of 10% reduction in I dss, the …
temperature 48 V dc stress tests and using a failure criterion of 10% reduction in I dss, the …
Hot-electron-related degradation in InAlN/GaN high-electron-mobility transistors
M Ťapajna, N Killat, V Palankovski… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Hot-electron temperature (Te) in InAlN/GaN high-electron-mobility transistors (HEMTs) was
determined using electroluminescence spectroscopy as a function of gate voltage and …
determined using electroluminescence spectroscopy as a function of gate voltage and …
Analysis of the reliability of AlGaN/GaN HEMTs submitted to on-state stress based on electroluminescence investigation
M Meneghini, G Meneghesso… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This paper presents a detailed analysis of the electroluminescence (EL) and short-term
degradation processes related to hot electrons that occur in AlGaN/GaN-based high …
degradation processes related to hot electrons that occur in AlGaN/GaN-based high …
Evaluation and numerical simulations of GaN HEMTs electrical degradation
A Chini, V Di Lecce, M Esposto… - IEEE Electron …, 2009 - ieeexplore.ieee.org
In this letter, the effects of dc stress on GaN high-electron-mobility transistors' performance
are investigated by means of experimental measurements and numerical simulation. A …
are investigated by means of experimental measurements and numerical simulation. A …