Conduction channel formation and dissolution due to oxygen thermophoresis/diffusion in hafnium oxide memristors
Transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches,
are under intense development for storage-class memory because of their favorable …
are under intense development for storage-class memory because of their favorable …
Defects, fault modeling, and test development framework for RRAMs
Resistive RAM (RRAM) is a promising technology to replace traditional technologies such
as Flash, because of its low energy consumption, CMOS compatibility, and high density …
as Flash, because of its low energy consumption, CMOS compatibility, and high density …
Spatially uniform resistance switching of low current, high endurance titanium–niobium-oxide memristors
We analyzed micrometer-scale titanium–niobium-oxide prototype memristors, which
exhibited low write-power (< 3 μW) and energy (< 200 fJ per bit per μm2), low read-power …
exhibited low write-power (< 3 μW) and energy (< 200 fJ per bit per μm2), low read-power …
Vertical thin film transistor
E Leobandung - US Patent 10,522,686, 2019 - Google Patents
(57) ABSTRACT A semiconductor device includes a stack of layers stacked vertically and
including a source layer, a drain layer and a channel layer between the source layer and the …
including a source layer, a drain layer and a channel layer between the source layer and the …
energy-driven devices and circuit designs for resistive random access memories
P Trotti - 2022 - theses.hal.science
Nowadays, electronic devices are implemented to carry out a wide set of tasks, ranging from
high performance processing to low power sensing. Aggressive technological downscaling …
high performance processing to low power sensing. Aggressive technological downscaling …
Cell-to-array thermal-aware analysis of stacked RRAM
The crossbar resistive random access memory (RRAM) has been studied extensively due to
its low-power, low-cost, high density and nonvolatile characteristics. However, the …
its low-power, low-cost, high density and nonvolatile characteristics. However, the …
Three-dimensional stackable multi-layer cross-point memory with single-crystalline bipolar junction transistor selectors
B Hekmatshoartabari, TH Ning, A Reznicek - US Patent 10,903,275, 2021 - Google Patents
US10903275B2 - Three-dimensional stackable multi-layer cross-point memory with single-crystalline
bipolar junction transistor selectors - Google Patents US10903275B2 - Three-dimensional …
bipolar junction transistor selectors - Google Patents US10903275B2 - Three-dimensional …
Three-dimensional stackable multi-layer cross-point memory with bipolar junction transistor selectors
A Reznicek, B Hekmatshoartabari, TH Ning - US Patent 11,018,188, 2021 - Google Patents
A method for manufacturing a semiconductor memory device includes forming a first doped
semiconductor layer on a conductive layer, forming a second doped semiconductor layer …
semiconductor layer on a conductive layer, forming a second doped semiconductor layer …
Vertical thin film transistor
E Leobandung - US Patent 11,239,369, 2022 - Google Patents
(57) ABSTRACT A semiconductor device includes a stack of layers stacked vertically and
including a source layer, a drain layer and a channel layer between the source layer and the …
including a source layer, a drain layer and a channel layer between the source layer and the …
Vertical thin film transistor
E Leobandung - US Patent 11,271,116, 2022 - Google Patents
(57) ABSTRACT A semiconductor device includes a stack of layers stacked vertically and
including a source layer, a drain layer and a channel layer between the source layer and the …
including a source layer, a drain layer and a channel layer between the source layer and the …