Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors

Impact of Doped Hafnium Oxides on Memory Window and Low-Frequency Noise in Ferroelectric FETs

A Kumar, N Mishra, A Bulusu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this article, we have studied the impact of different doped hafnium oxides (X: HfO) in
ferroelectric field-effect transistors (FeFETs) based on 28-nm high-K metal gate (HKMG) and …
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