We present the most recent upgrades of the time-of-flight medium energy ion scattering (TOF-
MEIS) system in Uppsala. The experimental chamber features a 6-axis goniometer with a …

In this work we review the use of the medium-energy ion scattering (MEIS) technique to
characterize nanostructures at the surface of a substrate. We discuss here how the …

A 16 MHz electrostatic beam chopper is implemented at the Uppsala University ToF-MEIS
system to complement the 4 MHz sinusoidal scanning, refining the resolution without drift …

In the present work, we have analyzed CdSe/ZnS core-shell quantum dots by medium
energy ion scattering (MEIS), which is a powerful technique to explore the synthesis …

The continuous downscaling in metal-oxide-semiconductor field effect transistors is
approaching fundamental limits. Allied to new device architectures, novel materials are …

In this work terbium scandate thin films have been deposited by atomic layer deposition
(ALD) on SiO 2/Si and Si 3 N 4/SiO 2/Si stacks and their structural and electrical behavior as …

This issue of ECS Transactions contains the peer-reviewed full length papers of the
International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held …

In this study, the authors present results on the structural, chemical, and electrical
characterization of HfO 2 thin layers on 300 mm Si wafers. The layers were prepared by …

Espalhamento de íons de energia intermediária (MEIS) é uma técnica analítica de feixe de
íons que pode determinar quantitativamente composições elbmentares e perfis I de …

ABSTRACT A 16 MHz electrostatic beam chopper is implemented at the Uppsala University
ToF-MEIS system to complement the 4 MHz sinusoidal scanning, refining the resolution …