Progress in semiconductor diamond photodetectors and MEMS sensors
M Liao - Functional Diamond, 2022 - Taylor & Francis
Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily
superior to those of the currently available wide-bandgap semiconductors for deep …
superior to those of the currently available wide-bandgap semiconductors for deep …
[HTML][HTML] A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Thermodynamically metastable α-, ε-(or κ-), and γ-Ga2O3: From material growth to device applications
M Biswas, H Nishinaka - APL Materials, 2022 - pubs.aip.org
ABSTRACT Gallium oxide (Ga2O3) has attracted tremendous attention in power electronics
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
and ultraviolet photodetectors because of the large bandgap of 4.9–5.3 eV available to all …
Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage
Y Kitabayashi, T Kudo, H Tsuboi… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Diamond has unique physical properties, which show great promise for applications in the
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …
Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors
TP Chow, I Omura, M Higashiwaki… - … on Electron Devices, 2017 - ieeexplore.ieee.org
We evaluate and compare the performance and potential of GaAs and of wide and extreme
bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power …
bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power …
A High Frequency Hydrogen-Terminated Diamond MISFET With of 70/80 GHz
X Yu, J Zhou, C Qi, Z Cao, Y Kong… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
A high frequency hydrogen-terminated diamond metal-insulator-semiconductor field-effect
transistor (MISFET) with extremely small source-drain distance of about 350 nm was …
transistor (MISFET) with extremely small source-drain distance of about 350 nm was …
Diamond metal–semiconductor field-effect transistor with breakdown voltage over 1.5 kV
H Umezawa, T Matsumoto… - IEEE Electron Device …, 2014 - ieeexplore.ieee.org
A diamond metal-semiconductor field-effect transistor (MESFET) with a Pt Schottky gate was
fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain …
fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain …
[HTML][HTML] High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
Diamond is a wide bandgap semiconductor that can work at high temperatures and resist
very high electric fields. It endures harsh environments through its physical stability and …
very high electric fields. It endures harsh environments through its physical stability and …
C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability
T Bi, Y Chang, W Fei, M Iwataki, A Morishita, Y Fu… - Carbon, 2021 - Elsevier
AC–Si bonded SiO 2/diamond interface is formed under a SiO 2 mask during the selective
diamond growth at a high temperature in a H 2 atmosphere including methane (5%). A few …
diamond growth at a high temperature in a H 2 atmosphere including methane (5%). A few …