[HTML][HTML] On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
[HTML][HTML] SPICE implementation of the dynamic memdiode model for bipolar resistive switching devices
This paper reports the fundamentals and the SPICE implementation of the Dynamic
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …
Memdiode Model (DMM) for the conduction characteristics of bipolar-type resistive switching …
Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current
DS Jeon, TD Dongale, TG Kim - Journal of Alloys and Compounds, 2021 - Elsevier
The crossbar array-based resistive memory is considered a potential architecture for high-
density nonvolatile memory applications. However, the sneak current path problem …
density nonvolatile memory applications. However, the sneak current path problem …
Modeling of short-term synaptic plasticity effects in ZnO nanowire-based memristors using a potentiation-depression rate balance equation
This letter deals with short-term plasticity (STP) effects in the conduction characteristics of
single crystalline ZnO nanowires, including potentiation, depression and relaxation …
single crystalline ZnO nanowires, including potentiation, depression and relaxation …
Grid-graph modeling of emergent neuromorphic dynamics and heterosynaptic plasticity in memristive nanonetworks
K Montano, G Milano, C Ricciardi - Neuromorphic Computing and …, 2022 - iopscience.iop.org
Self-assembled memristive nanonetworks composed of many interacting nano objects have
been recently exploited for neuromorphic-type data processing and for the implementation …
been recently exploited for neuromorphic-type data processing and for the implementation …
[HTML][HTML] Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
KJ Heo, HS Kim, JY Lee, SJ Kim - Scientific Reports, 2020 - nature.com
In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO2/n-type Si-based
resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO …
resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO …
Performance degradation and I–V model of TiO2-film-based resistive switching memory under proton irradiation
H Song, Y Liu, J Yan, X Zhong, J Wang… - Applied Physics …, 2023 - pubs.aip.org
The performance degradation of a TiO2-film-based RRAM (resistive random access
memory) is investigated in a proton irradiation experiment with an energy of 25 MeV. The …
memory) is investigated in a proton irradiation experiment with an energy of 25 MeV. The …
Memristive state equation for bipolar resistive switching devices based on a dynamic balance model and its equivalent circuit representation
A memory state equation consistent with a number of experimental observations is
presented and discussed within the framework of Chua's memristive systems theory. The …
presented and discussed within the framework of Chua's memristive systems theory. The …
[HTML][HTML] Fast fitting of the dynamic memdiode model to the conduction characteristics of RRAM devices using convolutional neural networks
In this paper, the use of Artificial Neural Networks (ANNs) in the form of Convolutional
Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode …
Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode …
Study on the connection between the set transient in RRAMs and the progressive breakdown of thin oxides
FL Aguirre, A Rodriguez-Fernandez… - … on Electron Devices, 2019 - ieeexplore.ieee.org
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …
state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is …