Sputtering and structural modifications induced in silicon dioxide (SiO2) thin films under (10–40 MeV) Auq+ heavy ion irradiation
Surface sputtering and structural modifications induced in silicon dioxide thin films (SiO2/Si)
deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Auq+ (q=+ 4,+ 6,+ …
deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Auq+ (q=+ 4,+ 6,+ …
Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.
S Mammeri, M Msimanga, A Dib… - Surface and …, 2018 - Wiley Online Library
The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by
swift Cuq+ heavy ions (q=+ 4 to+ 7) was investigated by varying both the ion energy over the …
swift Cuq+ heavy ions (q=+ 4 to+ 7) was investigated by varying both the ion energy over the …
Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV 84Kr15+ ions
S Mammeri, S Ouichaoui, H Ammi… - Nuclear Instruments and …, 2015 - Elsevier
A modified thermal spike model initially proposed to account for defect formation in metals
within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin …
within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin …
Experimental study and thermal spike modeling of sputtering in SiO2 thin films under MeV Auq+ heavy ion irradiation
The sputtering of silicon dioxide (SiO2/Si) thin films deposited onto silicon substrates and
irradiated by swift Auq+ heavy ions (q=+ 4 to+ 9) has been investigated both by experiment …
irradiated by swift Auq+ heavy ions (q=+ 4 to+ 9) has been investigated both by experiment …