Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
A comprehensive investigation of vertically stacked silicon nanosheet field effect transistors: an analog/rf perspective
In this article, the analog/RF performance of n-channel vertically stacked gate all around
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …
(GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D …
Optimization AlGaN/GaN HEMT with field plate structures
N Shi, K Wang, B Zhou, J Weng, Z Cheng - Micromachines, 2022 - mdpi.com
AlGaN/GaN HEMTs with several different designs of field plate structure are studied for
device optimization purposes. To increase device breakdown voltage, optimal dimensions of …
device optimization purposes. To increase device breakdown voltage, optimal dimensions of …
Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance
The optimization of device dimensions along with high-k gate dielectric is investigated in this
work for improving RF/analog performance of double gate (DG) TFET device. Through …
work for improving RF/analog performance of double gate (DG) TFET device. Through …
Analysis of InGaN back-barrier on linearity and RF performance in a graded-channel HEMT
L Geng, H Zhao, K Yu, X Ren, D Yang… - Journal of Electronic …, 2023 - Springer
The linearity and radio frequency (RF) performance of a proposed graded-channel HEMT
incorporating an InGaN back-barrier layer is investigated by an Atlas simulator. A W-like …
incorporating an InGaN back-barrier layer is investigated by an Atlas simulator. A W-like …
Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate
R Natarajan, E Parthasarathy - Silicon, 2022 - Springer
In this paper, electrical and microwave characteristics of Al 0.1 Ga 0.9 N channel HEMTs
was reported. The device performance were evaluated for conventional gate, field plate …
was reported. The device performance were evaluated for conventional gate, field plate …
Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
R Natarajan, P Murugapandiyan, N Vigneshwari… - Micro and …, 2024 - Elsevier
Abstract The AlN/GaN heterostructure on the AlGaN back barrier with different buffer layer
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …
Design and Simulation of Enhancement-Mode Vertical Superjunction GaN HEMT with Improved Ron and Cut-Off Frequency
GaN-based vertical superjunction high electron mobility transistors (HEMT) are recent
avenues for power transistors. In this work, an enhancement mode vertical superjunction …
avenues for power transistors. In this work, an enhancement mode vertical superjunction …
Applications of Emerging Materials: High Power Devices
Abstract SiC power MOSFETs, AlGaN/GaN-HEMTs (High Electron Mobility Transistors),
AlGaN/GaN-MOSHEMTs and β-Ga2O3 MOSFETs have become the most attractive …
AlGaN/GaN-MOSHEMTs and β-Ga2O3 MOSFETs have become the most attractive …