Magnetoresistive memory device and manufacturing method of the same
K Yoshino, T Nagase, EEH Youngmin… - US Patent App. 15 …, 2017 - Google Patents
US20170263680A1 - Magnetoresistive memory device and manufacturing method of the
same - Google Patents US20170263680A1 - Magnetoresistive memory device and …
same - Google Patents US20170263680A1 - Magnetoresistive memory device and …
Electronic device and method for fabricating the same
CH Kim, KS Park - US Patent 9,910,596, 2018 - Google Patents
Provided is an electronic device including a semiconductor memory. The semiconductor
memory may include: an interlayer dielectric layer formed over a substrate and having a …
memory may include: an interlayer dielectric layer formed over a substrate and having a …
Magnetoresistive random access memory device
J Lee, JH Kim, JH Park, SC Oh… - US Patent App. 16/101,243, 2019 - Google Patents
2018-08-10 Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG
ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …
ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …
Conductive alloy layer in magnetic memory devices and methods of fabrication
D Ouellette, J Brockman, T Rahman, A Smith… - US Patent …, 2023 - Google Patents
A memory device includes a bottom electrode, a conductive layer such as an alloy including
ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel …
ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel …
Magnetoresistive stack/structure with one or more transition metals in an insertion layer for a memory and methods therefor
S Ikegawa - US Patent 12,029,137, 2024 - Google Patents
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first
electrically conductive region, an intermediate layer positioned on or over the fixed magnetic …
electrically conductive region, an intermediate layer positioned on or over the fixed magnetic …
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction
According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer
provided between a first magnetic layer and a second magnetic layer. The tunnel barrier …
provided between a first magnetic layer and a second magnetic layer. The tunnel barrier …
Magnetoresistive stack/structure including metal insertion substance
S Ikegawa - US Patent 11,189,781, 2021 - Google Patents
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first
electrically conductive region, an intermediate layer positioned on or over the fixed magnetic …
electrically conductive region, an intermediate layer positioned on or over the fixed magnetic …